Fairchild Semiconductor Electronic Components Datasheet


FGB3040CS

N-Channel Ignition IGBT



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FGB3040CS
2FWREHU 201
EcoSPARKŠ 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
General Description
The FGB3040CS is an lgnition IGBT that offers outstand-
ing SCIS capability along with a ratiometric emitter current
sensing capability. This sensing is based on a emitter
active area ratio of 200:1. The output is provided through a
fourth (sense) lead. This signal provides a current level
that is proportional to the main collector to emitter current.
The effective ratio as measured on the sense lead is a
function of the sense output, the collector current and the
gate to emitter drive voltage.
Applications
„ Smart Automotive lgnition Coil Driver Circuits
„ ECU Based Systems
„ Distributorless Based Systems
„ Coil on Plug Based Systems
Features
„ SCIS Energy = 300mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Package
Symbol
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)
IC25 Continuous Collector Current, at VGE = 4.0V, TC = 25°C
IC110
Continuous Collector Current, at VGE = 4.0V, TC = 110°C
VGEM Maximum Continuous Gate to Emitter Voltage
PD
Power Dissipation, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)
TPKG Max. Package Temp. for Soldering (Package Body for 10 sec)
ESD Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)
@2012 Fairchild Semiconductor Corporation
FGB3040CS Rev. C
1
Ratings
430
24
300
170
21
19
±10
150
1
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
www.fairchildsemi.com


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Package Marking and Ordering Information
Device Marking
3040CS
3040CS
Device
FGB3040CS
FGB3040CS
Package
TO-263 6 Lead
TO-263 6 Lead
Reel Size
300mm
Tube
Tape Width
24mm
N/A
Quantity
800
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
IGEO
ICES
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1KΩ, See Fig.
-40 to 150oC
17
ICE = 10mA, VGE = 0V
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0, See Fig.
-40 to 150oC
17
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TC = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Gate to Emitter Leakage Current
VGE = ±10V
Collector to Emitter Leakage Current
VCES = 250V,
See Fig. 13
IECS
Emitter to Collector Leakage Current
VEC = 24V,
See Fig. 13
R1 Series Gate Resistance
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V
ICE(ON) Collector to Emitter On State Current VCE = 5V, VGE = 5V
Dynamic Characteristics
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
See Fig. 5
TC = 150oC
See Fig. 6
TC = 150oC
370 410 430 V
390 430 450 V
30 - - V
±12 ±14 -
V
- - ±9 μA
- - 25 μA
- - 1 mA
-
-
-
-
1
40
mA
- 100 -
Ω
- 1.3 1.6 V
- 1.6 1.85 V
- 1.8 2.35 V
- 37 -
A
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
βAREA Emitter Sense Area Ratio
β5Ω Emitter Current Sense Ratio
β20Ω
Emitter Current Sense Ratio
Switching Characteristics
ICE = 10A, VCE = 12V,
VGE = 5V, See Fig. 16
ICE = 1mA, VCE = VGE
See Fig. 12
ICE = 10A, VCE = 12V
Sense Area/Total Area
TC = 25oC
TC = 150oC
ICE = 8.0A, VGE = 5V, RSENSE = 5 Ω
ICE = 9.0A, VGE = 5V, RSENSE = 20 Ω
- 15 -
1.3 1.6 2.2
0.75 1.1 1.8
- 3.0 -
- 1/200 -
- 230 -
550 640 765
nC
V
V
-
-
-
td(ON)R
trR
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
Current Rise Time-Resistive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500μHy,
tfL Current Fall Time-Inductive
VGE = 5V, RG = 1KΩ
TJ = 25°C, See Fig. 14
SCIS Self Clamped inductive Switching
TJ = 25°C, L = 3.0mHy, ICE = 14.2A,
RG = 1k Ω, VGE = 5V, See Fig. 3&4
Thermal Characteristics
RθJC Thermal Resistance Junction to Case All Packages
- 0.6 4 μs
- 1.5 7 μs
- 4.7 15 μs
- 2.6 15 μs
- - 300 mJ
- - 1.0 oC/W
FGB3040CS Rev. C
2 www.fairchildsemi.com


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Typical Performance Curves
0.6
0.5
0.4
0.3
ICE = 18A
ICE = 15A
ICE = 10A
ICE = 8A
ICE = 5A
ICE = 3A
ICE = 1A
ICE = 0.5A
VGE = 5V, TJ = 25oC
0.2
0.1
0.0
1
10 100 1000
RSENSE, Emitter Sense Resistance (ohms)
Figure 1. Emitter Sense Voltage vs. Emitter Sense
Resistance
400
VGE = 5V, RSENSE = 5 ohms, TJ = 25oC
300
200
100
0
0 2 4 6 8 10 12 14 16 18 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
Figure 2. Emitter Sense Voltage vs. Collector to
Emitter Current
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
20 TJ = 25oC
15
10 TJ = 150oC
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0 25 50 75 100 125 150 175
tCLP, TIME IN CLAMP (μS)
200
Figure 3. Self Clamped Inductive Switching
Current vs. Time in Clamp
35
RG = 1KΩ, VGE = 5V, VCE = 14V
30
25
20 TJ = 25oC
15
10 TJ = 150oC
5
SCIS Curves valid for Vclamp Voltages of <430V
0
02468
L, INDUCTANCE (mHy)
10
Figure 4. Self Clamped Inductive Switching
Current vs. Inductance
1.36
1.32
1.28
VGE = 3.7V
VGE = 4.0V
ICE = 6A
1.24
1.20
1.16
VGE = 8V
VGE = 5V
VGE = 4.5V
1.12
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 5. Collector to Emitter On-State Voltage
vs. Junction Temperature
1.8
ICE = 10A
1.7 VGE = 3.7V
VGE = 4.0V
1.6
1.5
1.4
VGE = 4.5V
1.3 VGE = 5V
VGE = 8V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
Figure 6. Collector to Emitter On-State Voltage
vs. Junction Temperature
FGB3040CS Rev. C
3 www.fairchildsemi.com


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Typical Performance Curves (Continued)
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = -40oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
10
TJ = 25oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Collector to Emitter On-State Voltage
vs. Collector Current
40
VGE = 8.0V
VGE = 5.0V
30
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = 175oC
0
01234
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage
vs. Collector Current
25
VGE = 4.0V
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 11. DC Collector Current vs. Case
Temperature
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30 VCE = 5V
TJ = -40oC
TJ = 25oC
20
TJ = 175oC
10
0
012345
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 10. Transfer Characteristics
6
2.0
VCE = VGE
1.8 ICE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Threshold Voltage vs. Junction
Temperature
FGB3040CS Rev. C
4 www.fairchildsemi.com


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Typical Performance Curves (Continued)
10000
1000
VECS = 24V
100
10
VCES = 300V
1 VCES = 250V
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Leakage Current vs. Junction
Temperature
2000
1600
1200
CIES
f = 1MHz
VGE = 0V
800
400
0
0
CRES
COES
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 15. Capacitance vs. Collector to Emitter
Voltage
415
ICER = 10mA
410
12
ICE = 6.5A, VGE = 5V, RG = 1KΩ
10 Resistive tOFF
8
6
Inductive tOFF
4
Resistive tON
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Switching Time vs. Junction
Temperature
10
ICE = 10A, TJ = 25oC
8 VCE = 6V
6
4
VCE = 12V
2
0 0 5 10 15 20 25 30 35
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge
TJ = -40oC
405 TJ = 25oC
400 TJ = 175oC
395
10
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 17. Break 'own Voltage vs. Series Gate Resistance
6000
FGB3040CS Rev. C
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Typical Performance Curves
2
1 DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
1E-3
10-5
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION(s)
100
101
Figure 18. IGBT Normalized Transient Thermal Impedance, Junction to Case
FGB3040CS Rev. C1
6 www.fairchildsemi.com


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Test Circuit and Waveforms
BVCER
FGB3040CS Rev. C
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