Fairchild Semiconductor Electronic Components Datasheet


ISL9V2540S3ST

N-Channel Ignition IGBT



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November 2009
ISL9V2540S3ST
EcoSPARK® N-Channel Ignition IGBT
250mJ, 400V
Features
! SCIS Energy = 250mJ at TJ = 25oC
! Logic Level Gate Drive
! Qualified to AEC Q101
! RoHS Compliant
Applications
! Automotive Ignition Coil Driver Circuits
! Coil - On Plug Applications
General Description
The ISL9V2540S3ST is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
EcoSPARK® devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
Package
GATE
EMITTER
COLLECTOR
(FLANGE)
JEDEC TO-263AB
D2-Pak
Symbol
GATE
R1
R2
COLLECTOR
EMITTER
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev. A1
www.fairchildsemi.com


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Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 12.9A, L = 3.0mHy
At Starting TJ = 150°C, ISCIS = 10A, L = 3.0mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM)
Package Marking and Ordering Information
Device Marking
V2540S
Device
ISL9V2540S3ST
Package
TO-263AB
Reel Size
330mm
Ratings
430
24
250
150
15.5
15.3
±10
166.7
1.11
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
IC = -75mA, VGE = 0V,
TC = 25°C
IGES = ± 2mA
VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C
TC = 150°C
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
370
390
30
±12
-
-
-
-
-
10K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
IC = 6A,
VGE = 4V
IC = 10A,
VGE = 4.5V
TC = 25°C,
See Fig. 3
TC = 150°C
See Fig. 4
-
-
Typ Max Units
400 430
V
420 450
V
- -V
±14 -
V
- 25 µA
- 1 mA
- 1 mA
- 40 mA
70 -
- 26K
1.37 1.8
1.77 2.2
V
V
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com


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Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
td(ON)R
triseR
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
td(OFF)L
tfL
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
SCIS Self Clamped Inductive Switching
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A,
VCE = 12V
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1K
TJ = 25°C
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 3.0mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
TO-263
-
1.3
0.75
-
-
-
-
-
-
-
15.1
-
-
3.1
0.61
2.17
3.64
2.36
-
-
- nC
2.2 V
1.8 V
-V
- µs
- µs
- µs
- µs
250 mJ
0.9 °C/W
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com


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Typical Performance Curves
40
RG = 1K, VGE = 5V,Vdd = 14V
35
30
25
TJ = 25°C
20
15
10
5
0
0
TJ = 150°C
SCIS Curves valid for Vclamp Voltages of <430V
25 50 75 100 125 150 175
200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
40
RG = 1K, VGE = 5V,Vdd = 14V
35
30
25
20
TJ = 25°C
15
10
TJ = 150°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0 1 2 3 4 5 6 7 8 9 10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.55
ICE = 6A
1.50
VGE = 3.5V
1.45
1.40
VGE = 4.0V
VGE = 4.5V
1.35
1.30
VGE = 5.0V
VGE = 10.0V
1.25
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
2.2
ICE = 10A
2.1
2.0
1.9
VGE = 3.5V
VGE = 4.0V
1.8
1.7
VGE = 4.5V
1.6
VGE = 5.0V
1.5
1.4
-50 -25
0
VGE = 10.0V
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
VGE = 10.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
VGE = 3.0V
10
20
VGE = 10.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
VGE = 3.0V
10
55
TJ = - 40°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
TJ = 25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
www.fairchildsemi.com


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Typical Performance Curves (Continued)
20
VGE = 10.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.5V
10
VGE = 3.0V
5
TJ = 175°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
16
VGE = 4.0V
14
12
10
8
6
4
2
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
VCES = 250V
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
20
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
15
TJ = 175°C
10
5 TJ = 25°C
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.0
2.0
VCE = VGE
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
10
Inductive tOFF
9
ICE = 6.5A, VGE = 5V, RG = 1K
8
7
6 Resistive tOFF
5
4
3
Resistive tON
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
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Typical Performance Curves (Continued)
1500
1250
FREQUENCY = 1 MHz
1000
750
CIES
500
CRES
250 COES
0
0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 13. Capacitance vs Collector to Emitter
Voltage
10
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
8
6 VCE = 12V
4
2
VCE = 6V
0
0 5 10 15 20 25 30 35 40
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
445
440
435
430
425
420
415
410
405
10
TJ = 175°C
TJ = 25°C
TJ = - 40°C
100 1000
RG, SERIES GATE RESISTANCE ()
Figure 15. Breakdown Voltage vs Series Gate Resistance
5000
100
0.5
0.2
0.1
10-1 0.05
0.02
t1
PD
t2
10-2
10-5
0.01
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
10-2
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
10-1
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com


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Test Circuit and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KG
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
tP
0V
RG
VCE
L
DUT
+
VDD
-
IAS
0.01
Figure 19. Unclamped Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
0
tAV
Figure 20. Unclamped Energy Waveforms
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com


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SPICE Thermal Model
REV 16 May 2005
ISL9V2540S3ST
CTHERM1 th 6 19e -4
CTHERM2 6 5 12e -3
CTHERM3 5 4 15e -3
CTHERM4 4 3 25e -3
CTHERM5 3 2 69e -3
CTHERM6 2 tl 100e -3
RTHERM1 th 6 80e -3
RTHERM2 6 5 81e -3
RTHERM3 5 4 82e -3
RTHERM4 4 3 100e -3
RTHERM5 3 2 150e -3
RTHERM6 2 tl 1645e -4
SABER Thermal Model
ISL9V2540S3ST
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 19e -4
ctherm.ctherm2 6 5 = 12e -3
ctherm.ctherm3 5 4 = 15e -3
ctherm.ctherm4 4 3 = 25e -3
ctherm.ctherm5 3 2 = 69e -3
ctherm.ctherm6 2 tl = 100e -3
rtherm.rtherm1 th 6 = 80e -3
rtherm.rtherm2 6 5 = 81e -3
rtherm.rtherm3 5 4 = 82e -3
rtherm.rtherm4 4 3 = 100e -3
rtherm.rtherm5 3 2 = 150e -3
rtherm.rtherm6 2 tl = 1645e -4
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com


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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK®
EfficientMax™
EZSWITCH™*
™*
DEUXPEED™
®
Fairchild®
Fairchild Semiconductor®
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FACT®
FAST®
FastvCore
FETBench
FlashWriter®*
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FRFET®
Global Power ResourceSM
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Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck™
MICROCOUPLER
MicroFET
MicroPak
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START
SPM®
STEALTH™
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SuperSOT-3
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SupreMOS™
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Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®*
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TinyLogic®
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TinyPower
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TRUECURRENT*
μSerDes
UHC®
Ultra FRFET
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VCX
VisualMax
XS™
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Preliminary
First Production
No Identification Needed Full Production
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Not In Production
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I43
© 2009 Fairchild Semiconductor Corporation
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