Fairchild Semiconductor Electronic Components Datasheet


ISL9V3040S3

N-Channel Ignition IGBT



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October 20
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKŠ 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARKŠ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
G
E
JEDEC TO-262AA
EC
G
GATE
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20


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Package Marking and Ordering Information
Device Marking
V3040D
V3040S
V3040P
V3040S
V3040D
V3040S
Device
ISL9V3040D3ST
ISL9V3040S3ST
ISL9V3040P3
ISL9V3040S3
ISL9V3040D3S
ISL9V3040S3S
Package
TO-252AA
TO-263AB
TO-220AA
TO-262AA
TO-252AA
TO-263AB
Reel Size
330mm
330mm
Tube
Tube
Tube
Tube
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off State Characteristics
BVCER Collector to Emitter Breakdown Voltage
BVCES Collector to Emitter Breakdown Voltage
BVECS Emitter to Collector Breakdown Voltage
BVGES
ICER
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IECS
Emitter to Collector Leakage Current
R1 Series Gate Resistance
R2 Gate to Emitter Resistance
On State Characteristics
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
IC = -75mA, VGE = 0V,
TC = 25°C
IGES = ± 2mA
VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C
TC = 150°C
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
Dynamic Characteristics
IC = 6A,
VGE = 4V
IC = 10A,
VGE = 4.5V
IC = 15A,
VGE = 4.5V
TC = 25°C,
See Fig. 3
TC = 150°C,
See Fig. 4
TC = 150°C
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A, VCE = 12V
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
VCE = 300V, L = 500µHy,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 3.0 mHy,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
All packages
Tape Width
16mm
24mm
N/A
N/A
N/A
N/A
Min Typ
370 400
390 420
30 -
±12 ±14
--
--
--
--
- 70
10K -
- 1.25
- 1.58
- 1.90
- 17
1.3 -
0.75 -
- 3.0
- 0.7
- 2.1
- 4.8
- 2.8
--
--
Quantity
2500
800
50
50
75
50
Max Units
430 V
450 V
-V
-V
25 µA
1 mA
1 mA
40 mA
-
26K
1.60 V
1.80 V
2.20 V
- nC
2.2 V
1.8 V
-V
4 µs
7 µs
15 µs
15 µs
300 mJ
1.0 °C/W
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20


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Typical Performance Curves
30 30
RG = 1k, VGE = 5V,Vdd = 14V
RG = 1k, VGE = 5V,Vdd = 14V
25 25
20 20
15
TJ = 150°C
10
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25 50 75 100 125 150 175
200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
15
10
TJ = 150°C
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
02468
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.26
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.22
1.18
VGE = 8.0V
VGE = 4.5V
VGE = 5.0V
1.14
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
1.8
ICE = 10A
1.7
VGE = 3.7V
1.6 VGE = 4.0V
1.5
1.4
VGE = 4.5V
VGE = 5.0V
1.3
VGE = 8.0V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10 10
5
0
0
TJ = - 40°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
5
0
0
1.0 2.0
TJ = 25°C
3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20


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Typical Performance Curves (Continued)
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10
5
0
0
TJ = 175°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
25
VGE = 4.0V
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
10
VCES = 300V
1
VCES = 250V
0.1
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
25
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
20
15
TJ = 150°C
10
TJ = 25°C
5
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
2.2
VCE = VGE
2.0 ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25
0
25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
12
ICE = 6.5A, VGE = 5V, RG = 1K
Resistive tOFF
10
Inductive tOFF
8
6
4
Resistive tON
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20


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Typical Performance Curves (Continued)
1600
FREQUENCY = 1 MHz
1200
800
CIES
CRES
400
COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0 4 8 12 16 20 24 28 32
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
430
ICER = 10mA
425
420
415
410
405
400
395
390
10
TJ = 175°C
TJ = 25°C
100
TJ = - 40°C
1000
2000 3000
RG, SERIES GATE RESISTANCE ()
Figure 15. Breakdown Voltage vs Series Gate Resistance
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
t1
PD
t2
10-3
10-6
SINGLE PULSE
10-5
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D, October 20


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Test Circuit and Waveforms
L
C
PULSE
GEN
RG
G
DUT
E
VCE
RG = 1K
5V
R
or LOAD
L
C
G
DUT
E
+
VCE
-
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
tP
0V
VCE
C
RG G
DUT
L
+
VDD
-
E
IAS
0.01
0
Figure 19. Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
tAV
Figure 20. Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013


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SPICE Thermal Model
REV 7 March 2002
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013


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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AX-CAP®*
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®
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Making Small Speakers Sound Louder
and Better™
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MICROCOUPLER
MicroFET
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MicroPak2
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MotionMax
mWSaver®
OptoHiT
OPTOLOGIC®
OPTOPLANAR®
®
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Quiet Series
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Saving our world, 1mW/W/kW at a time™
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SMART START
Solutions for Your Success
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®*
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TRUECURRENT®*
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