Fairchild Semiconductor Electronic Components Datasheet


ISL9V5036S3

N-Channel Ignition IGBT



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November 2009
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D²-
Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
• Qualified to AEC Q101
• RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
G
E
Symbol
JEDEC TO-220AB
JEDEC TO-262AA
ECG
ECG
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
390
24
500
300
46
31
±10
250
1.67
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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Package Marking and Ordering Information
Device Marking
V5036S
V5036P
V5036S
V5036S
Device
ISL9V5036S3ST
ISL9V5036P3
ISL9V5036S3
ISL9V5036S3S
Package
TO-263AB
TO-220AA
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tube
Tube
Tape Width
24mm
N/A
N/A
N/A
Quantity
800
50
50
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCER
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
330 360 390
V
BVCES
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
360 390 420
V
BVECS
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
TC = 25°C
30 - - V
BVGES Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12 ±14
-
V
ICER
Collector to Emitter Leakage Current
VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C
TC = 150°C
-
-
- 25 µA
- 1 mA
IECS
Emitter to Collector Leakage Current
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
-
-
- 1 mA
- 40 mA
R1 Series Gate Resistance
- 75 -
R2 Gate to Emitter Resistance
10K - 30K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
Dynamic Characteristics
IC = 10A,
VGE = 4.0V
IC = 15A,
VGE = 4.5V
TC = 25°C,
See Fig. 4
TC = 150°C
-
-
1.17
1.50
1.60
1.80
V
V
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
-
1.3
0.75
32
-
-
- nC
2.2 V
1.8 V
IC = 10A,
VCE = 12V - 3.0 -
V
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
- 0.7 4 µs
- 2.1 7 µs
- 10.8 15 µs
- 2.8 15 µs
- - 500 mJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
TO-263, TO-220, TO-262
- - 0.6 °C/W
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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Typical Characteristics
45
RG = 1K, VGE = 5V,Vdd = 14V
40
35
30
25 TJ = 25°C
20
15 TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
0
0
50 100 150 200 250 300
350
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.10
1.05
1.00
ICE = 6A
VGE = 3.7V
VGE = 4.0V
45
RG = 1K, VGE = 5V,Vdd = 14V
40
35
30
25
20
15
TJ = 150°C
10
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <390V
0
02468
L, INDUCTANCE (mHy)
10
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.25
1.20
1.15
ICE = 10A
VGE = 3.7V VGE = 4.0V
0.95
0.90
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.10
1.05
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.85
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
1.00
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4.Collector to Emitter On-State Voltage vs
Junction Temperature
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20 20
10 10
TJ = - 40°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector to Emitter
On-State Voltage
0
0
TJ = 25°C
1.0 2.0 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
Figure 6. Collector Current vs Collector to Emitter
On-State Voltage
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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Typical Characteristics (Continued)
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
TJ = 175°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
50
VGE = 4.0V
40
30
20
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 300V
10
VCES = 250V
1
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
50
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
40
30
TJ = 175°C
20
TJ = 25°C
10
TJ = -40°C
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
VCE = VGE
2.0
ICE = 1mA
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
20
ICE = 6.5A, VGE = 5V, RG = 1K
18
Resistive tOFF
16
14
Inductive tOFF
12
10
8
6
Resistive tON
4
2
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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Typical Characteristics (Continued)
3000
2500
FREQUENCY = 1 MHz
2000
1500
CIES
1000
CRES
500
COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
1 VCE = 6V
0
0 10 20 30 40
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
50
360
ICER = 10mA
358
356
354
352
350
348
346
344
342
340
10
TJ = 175°C
TJ = 25°C
100
1000
RG, SERIES GATE RESISTANCE (k)
Figure 15. Breakdown Voltage vs Series Gate Resistance
TJ = - 40°C
2000 3000
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-3
SINGLE PULSE
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-6
10-5
10-4
10-3
10-2
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
10-1
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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Test Circuits and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KG
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VCE
L
DUT
+
VDD
-
IAS
0.01
0
Figure 19. Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
tAV
Figure 20. Energy Waveforms
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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SPICE Thermal Model
REV 1 May 2002
ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3
CTHERM1 th 6 4.0e2
CTHERM2 6 5 3.6e-3
CTHERM3 5 4 4.9e-2
CTHERM4 4 3 3.2e-1
CTHERM5 3 2 3.0e-1
CTHERM6 2 tl 1.6e-2
RTHERM1 th 6 1.0e-2
RTHERM2 6 5 1.4e-1
RTHERM3 5 4 1.0e-1
RTHERM4 4 3 9.0e-2
RTHERM5 3 2 9.4e-2
RTHERM6 2 tl 1.9e-2
SABER Thermal Model
SABER thermal model
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2
rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}
th JUNCTION
RTHERM1
RTHERM2
6
5
RTHERM3
RTHERM4
4
RTHERM5
3
RTHERM6
2
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl CASE
©2009 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009


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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK®
EfficientMax™
EZSWITCH™*
™*
DEUXPEED™
®
Fairchild®
Fairchild Semiconductor®
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FACT®
FAST®
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FETBench
FlashWriter®*
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Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck™
MICROCOUPLER
MicroFET
MicroPak
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START
SPM®
STEALTH™
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SuperSOT-3
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Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®*
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TRUECURRENT*
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Ultra FRFET
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VCX
VisualMax
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First Production
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Datasheet contains the design specifications for product development. Specifications may change in
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Rev. I43
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