Fairchild Semiconductor Electronic Components Datasheet


FDZ1416NZ

MOSFET



FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

June 2015
FDZ1416NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
24 V, 7 A, 23 m
Features
Max rS1S2(on) = 23 mat VGS = 4.5 V, IS1S2 = 1 A
Max rS1S2(on) = 25 mat VGS = 4 V, IS1S2 = 1 A
Max rS1S2(on) = 28 mat VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 33 mat VGS = 2.5 V, IS1S2 = 1 A
Occupies only 2.2 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.2 kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
“low pitch” WLCSP packaging process, the FDZ1416NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low rS1S2(on).
Applications
Battery management
Load switch
Battery protection
PIN1
S1
PIN1
S1
S2 G1
G2
G1
G2
TOP
BOTTOM
WL-CSP 1.4X1.6
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
S2
Ratings
24
±12
7
30
1.7
0.5
-55 to +150
Units
V
V
A
W
°C
RJA
RJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
74
230
°C/W
Device Marking
EN
Device
FDZ1416NZ
Package
WL-CSP 1.4X1.6
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
1
www.fairchildsemi.com


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
IS1S2
IGSS
Zero Gate Voltage Source1 to Source2
Current
Gate to Source Leakage Current
VS1S2 = 19 V, VGS = 0 V
VGS = ±12 V, VS1S2 = 0 V
On Characteristics
VGS(th)
rS1S2(on)
gFS
Gate to Source Threshold Voltage
Static Source1 to Source2 On Resistance
Forward Transconductance
VGS = VS1S2, IS1S2 = 250 A
VGS = 4.5 V, IS1S2 = 1 A
VGS = 4 V, IS1S2 = 1 A
VGS = 3.1 V, IS1S2 = 1 A
VGS = 2.5 V, IS1S2 = 1 A
VGS = 4.5 V, IS1S2 = 1 A,TJ = 125 oC
VS1S2 = 5 V, IS1S2 = 1 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VS1S2 = 12 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source1 Gate Charge
Gate to Source2 “Miller” Charge
VS1S2 = 12 V, IS1S2 = 1 A,
VGS = 4.5 V, RGEN = 6
VS1S2 = 12 V, IS1S2 = 1 A,
VG1S1 = 4.5 V, VG2S2 = 0 V
Source1 to Source2 Diode Characteristics
Ifss Maximum Continuous Source1 to Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward
Voltage
VG1S1 = 0 V, VG2S2 = 4.5 V,
Ifss = 1 A
(Note 2)
Min
0.4
9
10
11
12
Typ
0.9
16
17
19
22
24
4.5
1140
136
129
9.5
12
37
16
12
1.6
3.7
0.7
Max
1
±10
1.3
23
25
28
33
36
1515
220
205
19
22
59
33
17
1
1.2
Units
A
A
V
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes:
1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
a. 74 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 230 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
2
www.fairchildsemi.com


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics TJ = 25°C unless otherwise noted
30
VG1S1 = 4.5 V
VG1S1 = 4 V
VG1S1 = 3.1 V
20
VG1S1 = 2.5 V
30
20
VGS = 4.5 V
VGS = 4 V
VGS = 3.1 V
VGS = 2.5 V
VG1S1 = 2 V
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
0
0.0 0.2 0.4 0.6 0.8 1.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
1.5 VG1S1 = 2 V
VG1S1 = 2.5 V
VG1S1 = 3.1 V
1.0
VG1S1 = 4 V
VG1S1 = 4.5 V
0.5
0
10 20 30
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
VGS = 2 V
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
0.0 0.2 0.4 0.6 0.8 1.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 2. On-Region Characteristics
2.0
VGS = 2 V
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
1.5 VGS = 2.5 V
VGS = 3.1 V
VGS = 4 V
1.0
VGS = 4.5 V
0.5
0
10 20 30
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.6
IS1S2 = 1 A
VGS = 4.5 V
1.4
1.2
1.0
100
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
IS1S2 = 1 A
60
TJ = 125 oC
40
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 5. Normalized On Resistance
vs Junction Temperature
20
0
1.0
TJ = 25 oC
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. On Resistance vs Gate to
Source Voltage
4.5
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
3
www.fairchildsemi.com


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics TJ = 25°C unless otherwise noted
30
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VS1S2 = 5 V
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
100
VG1S1 = 0 V, VG2S2 = 4.5 V
10 TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0
0.5 1.0 1.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
2.0
4.5
VG2S2 = 0 V
IS1S2 = 1 A
VS1S2 = 9 V
3.0
VS1S2 = 12 V
VS1S2 = 15 V
1.5
0.0
0
5 10
Qg, GATE CHARGE (nC)
Figure 9. Gate Charge Characteristics
15
10-1
10-2
10-3
10-4
10-5
VS1S2 = 0 V
TJ = 125 oC
10-6
10-7
10-8
10-9
10-10
0
TJ = 25 oC
48
12
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current
vs Gate to Source Voltage
16
0.001
0.0 0.2 0.4 0.6 0.8 1.0
Vfss, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
2000
1000
Ciss
1.2
Coss
f = 1 MHz
VGS = 0 V
100
0.1
Crss
1
10
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure10. Capacitance vs Source1
to Source2 Voltage
50
10
30
1
THIS AREA IS
0.1 LIMITED BY rDS(on)
0.01
0.001
0.01
SINGLE PULSE
TJ = MAX RATED
RJA = 230 oC/W
TA = 25 oC
0.1
DERIVED FROM
TEST DATA
1 10
1 ms
10 ms
100 ms
1s
10 s
DC
100
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
4
www.fairchildsemi.com


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics TJ = 25°C unless otherwise noted
100
10
1
0.1
10-3
SINGLE PULSE
RJA = 230 oC/W
TA = 25 oC
10-2
10-1
100
101
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1
0.1
0.01
0.001
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RJA = 230 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
The following information applies to the WL-CSP package dimensions on the next page:
Pin Definitions:
Pin Name
Position
G1
A2
Product Specific Dimensions:
D
1.4 mm
E
1.6 mm
G2 S1 S2
B2 A1 B1
X
0.475 mm
Y
0.375 mm
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
5
www.fairchildsemi.com


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

0.03 C
2X
E
E±0.05
A
B
B
A
PIN A1
INDEX
AREA
12
TOP VIEW
E
D±0.05
0.03 C
2X
0.05 C
0.06 C
0.350MAX
0.65
B
0.65
A
12
Ø0.250
LAND PATTERN RECOMMENDATION
0.150+-00..002155
0.160±0.025
C SEATING PLANE
D
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
0.65
0.005 C A B PER ASME Y14.5M, 1994.
D. DATUM C IS DEFINED BY THE SPHERICAL
1
A
2
SOLDER BALL
0.300±0.025
(4X)
CROWNS OF THE BALLS.
E. FOR DIMENSIONS D,E,X AND Y SEE
PRODUCT DATA SHEET.
F. FOR PIN-OUT ASSIGNMENT , REFER TO DATA SHEET.
E G. DRAWING NAME: MKT-UC004AJREV2.
0.65 B
Y±0.020
E
X±0.020
BOTTOM VIEW


FDZ1416NZ Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com





Click to Download PDF File for PC