Fairchild Semiconductor Electronic Components Datasheet


FDS86240

MOSFET



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FDS86240
N-Channel Shielded Gate PowerTrench® MOSFET
150 V, 7.5 A, 19.8 mΩ
Features
General Description
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
„ Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
„ High Performance Trench Technology for Extremely Low
rDS(on)
„ High Power and Current Handling Capability in a Widely Used
Surface Mount Package
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using ON
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Applications
„ DC/DC Converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24 V and 48 V Systems
„ High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
7.5
199
220
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS86240
Device
FDS86240
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
Semiconductor Components Industries, LLC, 2016
December, 2016, Rev. 1.2
1
Publication Order Number:
FDS86240/D


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Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
105 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 7.5 A
VGS = 6 V, ID = 6.4 A
VGS = 10 V, ID = 7.5 A, TJ = 125 °C
VDS = 10 V, ID = 7.5 A
2
2.7 4
V
-11 mV/°C
17.3
19.7
30.8
26
19.8
26
35.3
mΩ
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
1930
198
8.3
0.84
2570
265
15
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 7.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V,
ID = 7.5 A
14 26 ns
4.2 10
ns
24 39 ns
4.9 10
ns
28 40 nC
16 22 nC
7.6 nC
5.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 7.5 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 7.5 A, di/dt = 100 A/μs
0.77
0.70
75
109
1.3
1.2
120
175
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 135 V, VGS = 10 V.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
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Typical Characteristics TJ = 25 °C unless otherwise noted.
30
VGS = 5 V
25
VGS = 10 V
20 VGS = 6 V
VGS = 5.5 V
15
10
5
0
0
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 1. On Region Characteristics
3.0
VGS = 4.5 V
2.5
2.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
1.5 VGS = 5.5 V
1.0
0.5
0
VGS = 6 V
VGS = 10 V
5 10 15 20 25
ID, DRAIN CURRENT (A)
30
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
2.2
2.0
ID = 7.5 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
ID = 7.5 A
40
20
0
2
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
30
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
25
VDS = 5 V
20
TJ = 150 oC
15
10
TJ = 25 oC
5
TJ = -55 oC
0
23456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
100
VGS = 0 V
10 TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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Typical Characteristics TJ = 25 °C unless otherwise noted.
10
ID = 7.5 A
8
6
4
VDD = 50 V
VDD = 100 V
VDD = 75 V
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
100
Ciss
Coss
10 f = 1 MHz
VGS = 0 V
Crss
1
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. Capacitancevs. Drain
to Source Voltage
30
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
300
100 10 μs
10
100 μs
1
0.1
0.01
0.001
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
CURVE BENT TO
ACUTAL DATA
0.1 1 10
1 ms
10 ms
100 ms
1s
10 s
DC
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
8
VGS = 10 V
6
VGS = 6 V
4
2
RθJA = 50 oC/W
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs. Ambient Temperature
100000
10000
1000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
100
10
1
0.1
10-5 10-4 10-3 10-2 10-1
1
10 102 103
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
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Typical Characteristics TJ = 25 °C unless otherwise noted.
2
1
10-1
10-2
10-3
10-4
10-5
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
102
103
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