Fairchild Semiconductor Electronic Components Datasheet


FDS6681Z

MOSFET



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Aug 2015
FDS6681Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
–20 A, –30 V. RDS(ON) = 4.6 m@ VGS = –10 V
RDS(ON) = 6.5 m@ VGS = –4.5 V
Extended VGSS range (–25V) for battery applications
HBM ESD protection level of 8kV typical (note 3)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Termination is Lead-free and RoHS Compliant
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS6681Z
Device
FDS6681Z
Reel Size
13’’
5
6
7
8
Ratings
–30
±25
–20
–105
2.5
1.2
1.0
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z Rev 1.2 (W)


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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT)
Total Gate Charge at VGS = –10V
Qg(TOT)
Total Gate Charge at VGS = –5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –20 A
VGS = –4.5 V, ID = –17 A
VGS = –10 V, ID = –20 A,TJ=125°C
VDS = –5 V, ID = –20 A
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6
VDS = –15 V, ID = –20 A
Min Typ Max Units
–30 V
–26 mV/°C
–1 µA
±10 µA
–1 –1.8 –3
V
6 mV/°C
3.8 4.6
5.2 6.5
5.0 6.3
79
m
S
7540
1400
1120
pF
pF
pF
20 35
9 18
660 1060
380 610
185 260
105 150
26
47
ns
ns
ns
ns
nC
nC
nC
nC
FDS6681Z Rev 1.2 (W)


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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
tRR Reverse Recovery Time
IF = –20 A,
QRR Reverse Recovery Charge
dIF/dt = 100 A/µs
(Note 2)
–2.1
–0.7 –1.2
125
94
A
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDS6681Z Rev 1.2 (W)


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Typical Characteristics
105
VGS = -10V
90
-6.0V
75
60
45
-4.0V
-4.5V
-3.5V
30
15
0
0
-3.0V
0.5 1 1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. On-Region Characteristics.
2.4
VGS = -3.5V
2.2
2
1.8
1.6 -4.0V
1.4 -4.5V
-5.0V
1.2 -6.0V
-8.0V
1 -10V
0.8
0
15 30 45 60 75 90 105
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -20A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -30 -10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.012
0.01
ID = -10A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
105
VDS = -5V
90
75
60
45
TA = 125oC
30
-55oC
15
0
1
25oC
1.25 1.5 1.75
2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.25
Figure 5. Transfer Characteristics.
1000
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6681Z Rev 1.2 (W)


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Typical Characteristics
10
ID = -20A
8
6 VDS = -10V
-20V
4
-15V
2
0
0 40 80 120 160 200
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
1
100us
1ms
10ms
100ms
1s
10s
DC
VGS = -10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
10000
8000
6000
f = 1MHz
VGS = 0 V
Ciss
4000
2000
0
0
Crss
Coss
5 10 15 20 25
-VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RJA
RθJA = 125 °C/W
P(pk
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6681Z Rev 1.2 (W)


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