Fairchild Semiconductor Electronic Components Datasheet


FDS4141

MOSFET



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November 2007
FDS4141
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 13.0m
Features
„ Max rDS(on) = 13.0mat VGS = -10V, ID = -10.5A
„ Max rDS(on) = 19.0mat VGS = -4.5V, ID = -8.4A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the applications and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
„ Control switch in synchronous & non-synchronous buck
„ Load switch
„ Inverter
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-40
±20
-10.8
-36
294
5
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS4141
Device
FDS4141
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250µA, VGS = 0V
ID = -250µA, referenced to 25°C
VDS = -32V,
VGS = ±20V, VDS = 0V
-40 V
-33 mV/°C
-1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250µA
ID = -250µA, referenced to 25°C
VGS = -10V, ID = -10.5A
VGS = -4.5V, ID = -8.4A
VGS = -10V, ID = -10.5A, TJ= 125°C
VDD = -5V, ID = -10.5A
-1.0
-1.6
5.3
11.0
15.2
16.8
37
-3.0
13.0
19.0
19.9
V
mV/°C
m
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
2005
355
190
5
2670
475
285
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -20V, ID = -10.5A,
VGS = -10V, RGEN = 6
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -20V,
ID = -10.5A
10 20 ns
5 10 ns
42 68 ns
12 22 ns
35 49 nC
19 27 nC
6 nC
7 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = -10.5A
VGS = 0V, IS = -2.1A
(Note 2)
(Note 2)
-0.8 -1.3
-0.7 -1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -10.5A, di/dt = 100A/µs
26 42 ns
14 26 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = -14A, VDD = -40V, VGS = -10V.
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
36
VGS = -3.5V
VGS = -4V
27
VGS = -4.5V
VGS = -10V
18
VGS = -3V
9
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
3.5
VGS = -3V
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.5
2.0
1.5
1.0
0.5
0
VGS = -3.5V
VGS = -4V
9 18
-ID, DRAIN CURRENT(A)
VGS = -4.5V
VGS = -10V
27 36
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
ID = -10.5A
1.6 VGS = -10V
1.4
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
ID = -10.5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
30
TJ = 125oC
20
10
TJ = 25oC
0
2468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
36
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
27
VDS = -5V
18
TJ = 150oC
TJ = 25oC
9
TJ = -55oC
0
0123
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
100
VGS = 0V
10
1
0.1
0.01
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -10.5A
8
VDD = -20V
6
VDD = -15V
4
VDD = -25V
2
0
0 5 10 15 20 25 30 35
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
40
5000
1000
Ciss
Coss
f = 1MHz
100 VGS = 0V
Crss
60
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
40
20 12
10
TJ = 125oC
TJ = 25oC
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
500
100
10
1ms
1
0.1
0.01
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
0.1 1 10
-VDS, DRAIN to SOURCE VOLTAGE (V)
10ms
100ms
1s
10s
DC
100 200
Figure 11. Forward Bias Safe
Operating Area
9
VGS = -10V
6
VGS = -4.5V
3
RθJA = 50oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
150
2000
1000
100
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
0.0001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Transient Thermal Response Curve
1000
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
5
www.fairchildsemi.com


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Preliminary Datasheet
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As used herein:
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
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Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
tm
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
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changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
6
www.fairchildsemi.com


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