Fairchild Semiconductor Electronic Components Datasheet


FDS8935

MOSFET



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FDS8935
Dual P-Channel PowerTrench® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
„ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
„ Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A
„ High performance trench technology for extremely low rDS(on)
„ This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ Load Switch
„ Synchronous Rectifier
D2
D1
D1
D2
Pin 1
G2
S2
G1
S1
D2 55
D2 66
D1 77
D1 88
Q2
Q1
44 G2
33 S2
22 G1
11 S1
SO-8
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-80
±20
-2.1
-10
37
3.1
1.6
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8935
Device
FDS8935
Package
SO-8
(Note 1)
(Note 1a)
40
78
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
-80
V
ID = -250 μA, referenced to 25 °C
-61 mV/°C
VDS = -64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 μA
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -2.1 A
VGS = -4.5 V, ID = -1.9 A
VGS = -10 V, ID = -2.1 A,TJ = 125 °C
VDS = -10 V, ID = -2.1 A
-1
-1.8 -3
V
5 mV/°C
148 183
176 247 mΩ
249 308
6.4 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -40 V, VGS = 0 V,
f = 1MHz
661 879
47 63
24 36
6
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -40 V, ID = -2.1 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to -10 V
VGS = 0 V to -5 V VDD = -40 V,
ID = -2.1 A
5 10 ns
3 10 ns
22 36 ns
3 10 ns
13 19 nC
7 10 nC
1.6 nC
2.6 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = -2.1 A
VGS = 0 V, IS = -1.3 A
(Note 2)
(Note 2)
-1.8 -1.3
-0.8 -1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -2.1 A, di/dt = 300 A/μs
19 30 ns
34 54 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a)78 °C/W when
mounted on a 1 in2
pad of 2 oz copper
b)135 °C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3.0 mH, IAS = -5.0 A, VDD = -80V, VGS = -10V.
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
10
VGS = -10 V
8
VGS = -5 V
VGS = -4 V
6
VGS = -3.5 V
4 VGS = -3 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0123
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
3.0
VGS = -3 V
2.5
VGS = -3.5 V
2.0
1.5
1.0
VGS = -4 V VGS = -5 V
0.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.0
024
6
-ID, DRAIN CURRENT (A)
VGS = -10 V
8 10
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = - 2.1 A
1.8 VGS = -10 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
VDS = -5 V
6
4
TJ = 150 oC
TJ = 25 oC
2
TJ = -55 oC
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
800
ID = -2.1 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
600
400 TJ = 150 oC
200
TJ = 25 oC
0
2468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
20
10 VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = -2.1 A
8
6
4
VDD = -20 V
VDD = -40 V
VDD = -60 V
1000
100
Ciss
Coss
2
0
0 3 6 9 12 15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2.2
2.0
TJ = 25 oC
1.8
1.6
TJ = 100 oC
1.4
TJ = 125 oC
1.2
1.0
0.1
1
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
10
f = 1 MHz
VGS = 0 V
Crss
10
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
100
2.5
2.0
VGS = -10 V
1.5
VGS = -4.5 V
1.0
Limited by package
0.5
RθJA = 78 oC/W
0.0
25 50 75 100 125
TA, Ambient TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
150
20
10 100 us
1 ms
1
THIS AREA IS
0.1 LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
0.01
TA = 25 oC
0.005
0.1
1
10
10 ms
100 ms
1s
10 s
DC
100 300
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
VGS = -10 V
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10 100
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
5
www.fairchildsemi.com


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©2010 Fairchild Semiconductor Corporation
FDS8935 Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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