Fairchild Semiconductor Electronic Components Datasheet


FDS9934C

MOSFET



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March 2006
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: 6.5 A, 20 V. RDS(ON) = 30 m@ VGS = 4.5 V
RDS(ON) = 43 m@ VGS = 2.5 V.
Q2: –5 A, –20 V, RDS(ON) = 55 m@ VGS = –4.5 V
RDS(ON) = 90 m@ VGS = –2.5 V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS9934C
Device
FDS9934C
Reel Size
13’’
Ratings
Q1 Q2
20 –20
±10 ±12
6.5 –5
20 –30
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS9934C Rev D(W)


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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 250 µA
Q1 20
V
VGS = 0 V, ID = –250 µA
Q2 –20
ID = 250 µA, Referenced to 25°C
Q1
14 mV/°C
ID = –250 µA, Referenced to 25°C Q2
–14
VDS = 16V, VGS = 0 V
Q1
1 µA
VDS = –16V, VGS = 0 V
Q2
–1
VGS = ±8 V, VDS = 0 V
Q1
±100 nA
VGS = ±12 V, VDS = 0 V
Q2
±100
VGS(th)
VGS(th)
?TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transcoductance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = 250 µA
ID = 250 uA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 4.5 V, ID = 6.5 A
VGS = 2.5 V, ID = 5.4 A
VGS = 4.5 V, ID =6.5A, TJ=125°C
VGS = –4.5 V, ID = –3.2 A
VGS = –2.5 V, ID = –1.0 A
VGS = –4.5 V,ID = –3.2 A, TJ=125°C
VGS = 4.5V, VDS = 5 V
VGS = –4.5 V, VDS = – 5 V
VDS = –5 V, ID = 6.5 A
VDS = 5 V, ID = – 5.5 A
Dynamic Characteristics
Ciss Input Capacitance
Q1
VDS = 10V, VGS = 0 V,
Coss Output Capacitance
f = 1.0 MHz
Q2
Crss Reverse Transfer Capacitance VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.6
–0.6
15
–16
1 1.5 V
0.9 –1.2
–3 mV/°C
3
25 30 m
35 43
35 50
43 55 m
64 90
55 76
A
22 S
14 S
650 pF
955
150 pF
215
85 pF
115
1.4
4.9
FDS9934C Rev D(W)


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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDD = 10 V, ID = 1 A,
VGS = 4.5V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDD = –6V, ID = –1A,
VGS = –4.5V, RGEN = 6
Qg Total Gate Charge
Qgs Gate-Source Charge
Q1
VDS = 10 V, ID = 3 A, VGS = 4.5V
Qgd Gate-Drain Charge
Q2
VDS = –6 V, ID = –3.2 A,VGS = –4.5 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
Voltage
VGS = 0 V, IS = -2.0 A (Note 2)
trr Diode Reverse Recovery Q1
Time
IF = 6.5 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Q2
Charge
IF = -3.2 A, diF/dt = 100 A/µs
Q1
Q2
Q1
Q2
Q1
Q2
8 16 ns
16 29
9 17 ns
9 18
15 26 ns
25 41
4 9 ns
9 19
6.2 9 nC
8.7 12
1.2 nC
2.1
1.7 nC
2.1
0.73
–0.8
15
20
5
7
1.3
–1.3
1.2
–1.2
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
FDS9934C Rev D(W)


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Typical Characteristics: Q1 (N-Channel)
20
VGS = 4.5V
2.5V
16
3.5 3.0V
12
8 2.0V
4
0
0 0.5 1 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
2.4
VGS = 2.0V
2.2
2
1.8
1.6
2.5V
1.4
3.0V
1.2 3.5V
4.0V
1
0.8
0
5 10 15
ID, DIRAIN CURRENT (A)
4.5V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 6.5A
VGS = 4.5V
1.4
0.11
ID = 3.25A
0.09
1.2 0.07
TA = 125oC
1 0.05
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.03
0.01
1
TA = 25oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5
20
VDS = 5V
15
10
5
TA = -55oC
125oC
25oC
100
VGS = 0V
10
1
TA = 125oC
0.1
0.01
0.001
25oC
-55oC
0.0001
0 0 0.2 0.4 0.6 0.8 1 1.2
1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9934C Rev D(W)


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Typical Characteristics: Q1 (N-Channel)
5
ID = 3 A
4
3
VDS = 5V
15V
10V
2
1
0
01234567
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
8
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
f = 1 MHz
VGS = 0 V
600
400
200
Crss
0
0
Coss
Ciss
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
100
FDS9934C Rev D(W)


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Typical Characteristics: Q2 (P-Channel)
30
VGS = -4.5V
-4.0V
20 V
-3.5V
V
-3.0V
-2.5V
10
-2.0V
0
012345
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
1.8
VGS=-2.5V
1.6
1.4
-3.0V
1.2 -3.5V
-4.0V
-4.5V
1
0.8
0
6 12 18 24
-ID, DRAIN CURRENT (A)
30
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
ID = -5A
VGS = -4.5V
1.2
1.1
1
0.9
0.8
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
0.14
ID = -2.5A
0.12
0.1
0.08
0.06
0.04
TA = 25oC
TA = 125oC
0.02
0
2468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = -5V
25
20
TA = -55oC
125oC
25oC
15
10
5
0
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
100
VGS =0V
10
1
0.1
0.01
0.001
TA = 125oC
25oC
-55oC
0.0001
5 0 0.4 0.8 1.2 1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9934C Rev D(W)


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Typical Characteristics: Q2 (P-Channel)
5
ID = -5A
4
3
VDS = -4V
-6V
-8V
2
1
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
1600
1200
800
Ciss
f = 1 MHz
VGS = 0 V
Coss
400
Crss
0
0
4 8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 20. Single Pulse Maximum
Power Dissipation.
1000
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
TJ - TA = Pt2 * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9934C Rev D(W)


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Rev. I18


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