Fairchild Semiconductor Electronic Components Datasheet


FDS8858CZ

MOSFET



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FDS8858CZ
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
October 2011
Features
Q1: N-Channel
„ Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
„ Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel
„ Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
„ Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
„ High power and handing capability in a widely used surface
mount package
„ Fast switching speed
General Description
These dual N and P-Channel enhancement mode power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Applications
„ Inverter
„ Synchronous Buck
SO-8
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
D2 5
D2 6
D1 7
D1 8
Q2
Q1
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1c)
Q1 Q2
30 -30
±20 ±25
8.6 -7.3
20 -20
50 11
2.0
1.6
0.9
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
40
78
°C/W
Device Marking
FDS8858CZ
Device
FDS8858CZ
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
ID = -250μA, VGS = 0V
ID = 250μA, referenced to 25°C
ID = -250μA, referenced to 25°C
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
Q1 30
Q2 -30
Q1
Q2
Q1
Q2
Q1
Q2
22
-22
V
mV/°C
1
-1
μA
±10
±10
μA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
VGS = VDS, ID = -250μA
Q1 1 1.6
Q2 -1 -2.1
3
-3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
ID = -250μA, referenced to 25°C
Q1
Q2
-5.4
6.0
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 8.6A
VGS = 4.5V, ID = 7.3A
VGS = 10V, ID = 8.6A, TJ = 125°C
VGS = -10V, ID = -7.3A
VGS = -4.5V, ID = -5.6A
VGS = -10V, ID = -7.3A, TJ = 125°C
Q1
Q2
12.4
15.2
17.7
17.0
20.0
24.3
17.1 20.5
26.5 34.5
24.0 28.8
mΩ
gFS Forward Transconductance
VDS = 5V, ID = 8.6A
VDS = -5V, ID = -7.3A
Q1 27
Q2 21
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Q1
VDS = 15V, VGS = 0V, f = 1MHZ
Q2
VDS = -15V, VGS = 0V, f = 1MHZ
f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
905
1675
180
290
110
260
1.3
4.4
1205
2230
240
390
165
390
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 15V, ID = 8.6A,
VGS = 10V, RGEN = 6Ω
Q2
VDD = -15V, ID = -7.3A,
VGS = -10V, RGEN = 6Ω
Q1
VGS = 10V, VDD = 15V, ID = 8.6A
Q2
VGS = -10V, VDD = -15V, ID = -7.3A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7
9
14
18
ns
3
10
10
20
ns
19
33
35
53
ns
3
16
10
29
ns
17
33
24
46
nC
2.7
6.1
nC
3.4
8.5
nC
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
2
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
VGS = 0V, IS = 8.6A
VGS = 0V, IS = -7.3A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 8.6A, di/dt = 100A/s
Q2
IF = -7.3A, di/dt = 100A/s
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.9 -1.2
V
25
28
38
42
ns
19
22
29
33
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 78°C/W when
mounted on a 0.5 in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimun pad
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 1mH, IAS = 10A, VDD = 27V, VGS = 10V; P-ch: L = 1mH, IAS = -4.7A, VDD = -27V, VGS = -10V.
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
3
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
20
VGS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
16 VGS = 4.5V
VGS = 3.5V
12
VGS = 3.0V
8
4
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On- Region Characteristics
4
3.0
VGS = 3.0V
2.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
2.0
VGS = 3.5V
1.5
VGS = 4.5V
1.0
0.5
0
VGS = 10V
4 8 12
ID, DRAIN CURRENT(A)
16
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
20
1.6
ID = 8.6A
1.4 VGS = 10V
35
ID = 8.6A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
30
1.2 25
TJ = 125oC
1.0 20
TJ = 25oC
0.8 15
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On - Resistance
vs Junction Temperature
10
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
16
VDS = 5V
12
TJ = 25oC
8
TJ = 150oC
4
TJ = -55oC
0
0123
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
20
10 VGS = 0V
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
4
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
10
ID = 8.6A
8
6
4
VDD = 10V
VDD = 15V
VDD = 20V
2
0
0 4 8 12 16
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
20
3000
1000
Ciss
Coss
Crss
100 f = 1MHz
VGS = 0V
50
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitancevs Drain
to Source Voltage
30
20
10
TJ = 125oC
TJ = 25oC
10-3
VDS = 0V
10-4
10-5
10-6
TJ = 125oC
TJ = 25oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
8
100
6
VGS = 10V
4
VGS = 4.5V
2
RθJA = 78oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
150
10-7
0
5 10 15 20 25
VGS, GATE TO SOURCE VOLTAGE(V)
30
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
50
10
1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
10
10ms
100ms
1s
10s
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
5
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
300
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0---------T----A----
125
TA = 25oC
1
0.5
10-3
SINGLE PULSE
RθJA = 135oC/W
10-2
10-1 100
t, PULSE WIDTH (s)
101
Figure 13. Single Pulse Maximum Power Dissipation
102
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1 0.01
PDM
0.01
0.0003
10-3
SINGLE PULSE
RθJA = 135oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJA + TA
10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 14. Transient Thermal Response Curve
103
103
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
6
www.fairchildsemi.com


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Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
20
PULSE DURATION = 80μs
VGS = -10V DUTY CYCLE = 0.5%MAX
16
VGS = -5V
VGS = -4.5V
12
VGS = -4V
VGS = -3.5V
8
4
VGS = -3V
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
1.6
ID = -7.3A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On- Resistance
vs Junction Temperature
4.0
3.5
VGS = -3.5V
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
2.5
2.0 VGS = -4V
VGS = -4.5V
1.5
VGS = -5V
1.0
VGS = -10V
0.5
0 4 8 12 16 20
-ID, DRAIN CURRENT(A)
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
60
ID = -7.3A PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
50
40
TJ = 125oC
30
20
10
2
TJ = 25oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
10
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
16
VDS = -5V
12
8
TJ = 25oC
TJ =-55oC
4
TJ = 125oC
0
01234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
5
30
10 VGS = 0V
1
0.1
0.01
TJ = 150oC
0.001
TJ = 25oC
TJ = -55oC
0.0001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
7
www.fairchildsemi.com


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Typical Characteristics(Q2 P-Channel)TJ = 25oC unless otherwise noted
10
ID = -7.3A
8
6
4
VDD = -10V
VDD = -15V
VDD = -20V
2
0
0 7 14 21 28
-Qg, GATE CHARGE(nC)
Figure 21. Gate Charge Characteristics
35
4000
Ciss
1000
Coss
Crss
f = 1MHz
VGS = 0V
100
0.1
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
30
20
10
TJ = 125oC
TJ = 25oC
10-3
VDS = 0V
10-4
10-5
10-6
TJ = 125oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
10
Figure 23. Unclamped Inductive
Switching Capability
8
30
10-7
10-8
0
TJ = 25oC
5 10 15 20 25
-VGS, GATE TO SOURCE VOLTAGE(V)
30
Figure 24. Gate Leakage Current vs Gate to
Source Voltage
60
6
VGS = -10V
4
VGS = -4.5V
2
RθJA = 78oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure 25. Maximum Continuous Drain
Current vs Ambient Temperature
150
10
1ms
1 10ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
10
100ms
1s
10s
DC
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 26. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
8
www.fairchildsemi.com


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Typical Characteristics(Q2 P-Channel) TJ = 25oC unless otherwise noted
300
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0----------T---A----
125
TA = 25oC
1
0.5
10-3
SINGLE PULSE
RθJA = 135oC/W
10-2
10-1
100
101
t, PULSE WIDTH (s)
Figure 27. Single Pulse Maximum Power Dissipation
102
103
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PDM
0.01
0.0003
10-3
SINGLE PULSE
RθJA = 135oC/W
10-2
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJA + TA
10-1 100 101 102
t, RECTANGULAR PULSE DURATION (s)
Figure 28. Transient Thermal Response Curve
103
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
9
www.fairchildsemi.com


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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Full Production
Not In Production
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I58
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