Fairchild Semiconductor Electronic Components Datasheet


FDS4897AC

MOSFET



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FDS4897AC
October 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 6.1 A, 26 mP-Channel: -40 V, -5.2 A, 39 m
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 26 mat VGS = 10 V, ID = 6.1 A
„ Max rDS(on) = 31 mat VGS = 4.5 V, ID = 5.6 A
Q2: P-Channel
„ Max rDS(on) = 39 mat VGS = -10 V, ID = -5.2 A
„ Max rDS(on) = 65 mat VGS = -4.5 V, ID = -4.1 A
„ 100% UIL Tested
„ RoHS Compliant
These dual N- and P-Channel MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench® process
that has been especially tailored to minimize on-state resistance
and yet maintain superior switching performance.
Applications
„ Inverter
„ Power Supplies
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q2
Q1
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
EAS
TJ, TSTG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
TA = 25 °C (Note 1a)
TA = 25 °C (Note 1b)
(Note 3)
Q1 Q2
40 -40
±20 ±20
6.1 -5.2
24 -24
2.0
1.6
0.9
37 73
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJC
Thermal Resistance, Junction to Case,
Thermal Resistance, Junction to Ambient,
Package Marking and Ordering Information
(Note 1)
(Note 1a)
40
78
°C/W
Device Marking
FDS4897AC
Device
FDS4897AC
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VDS = 32 V, VGS = 0 V
VDS = -32 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
Type Min
Q1 40
Q2 -40
Q1
Q2
Q1
Q2
Q1
Q2
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
VGS = VDS, ID = 250 µA
VGS = VDS, ID = -250 µA
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VGS = 10 V, ID = 6.1 A
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, ID = 6.1 A, TJ = 125 °C
VGS = -10 V, ID = -5.2 A
VGS = -4.5 V, ID = -4.1 A
VGS = -10 V, ID = -5.2 A, TJ = 125 °C
VDD = 5 V, ID = 6.1 A
VDD = -5 V, ID = -5.2 A
Q1
VDS = 20 V, VGS = 0 V, f = 1 MHZ
Q2
VDS = -20 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.5
-1.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 20 V, ID = 6.1 A,
VGS = 10 V, RGEN = 6
Q2
VDD = -20 V, ID = -5.2 A,
VGS = -10 V, RGEN = 6
Q1
VGS = 10 V, VDD = 20 V, ID = 6.1 A
Q2
VGS = -10 V, VDD = -20 V, ID = -5.2 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Typ Max Units
V
37
-32
mV/°C
1
-1
µA
±100 nA
±100 nA
2.0 3.0
-2.0 -3.0
V
-6
6
mV/°C
20 26
24 31
30 39
m
28 39
45 65
41 57
24
14
S
795 1055
765 1015
95 130
135 180
65 100
80 120
1.7
3.6
pF
pF
pF
6
8
12
15
ns
2
3
10
10
ns
17
17
30
30
ns
2
3
10
10
ns
15
15
21
20
nC
2.5
2.6
nC
2.9
3.2
nC
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
2
www.fairchildsemi.com


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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 6.1 A, di/dt = 100 A/s
Q2
IF = -5.2 A, di/dt = 100 A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.75
-0.76
17
20
7
10
1.2
-1.2
31
36
15
20
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78 °C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 135 °C/W when
mounted on a
minimun pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, N-ch: L = 3 mH, IAS = 5 A, VDD = 40 V, VGS = 10 V; P-ch: L = 3 mH, IAS = -7 A, VDD = -40 V, VGS = -10 V.
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
3
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
24
VGS = 10 V
20 VGS = 4.5 V
VGS = 4 V
16
VGS = 3.5 V
12
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
8
4
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
ID = 6.1 A
1.6 VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
5
PULSE DURATION = 80 µs
VGS = 3 V
DUTY CYCLE = 0.5% MAX
4
VGS = 3.5 V
3
2
1
0.5
0
VGS = 4 V VGS = 4.5 V
4 8 12 16
ID, DRAIN CURRENT (A)
VGS = 10 V
20 24
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
70
60
50
40
30
20
10
2
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 6.1 A
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
20
VDS = 5 V
16
12
TJ = 150 oC
8
TJ = 25 oC
TJ = -55 oC
4
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
40
10 VGS = 0 V
1 TJ = 150 oC
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
4
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 6.1 A
8
VDD = 15 V
6
VDD = 20 V
VDD = 25 V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure8. CapacitancevsDrain
to Source Voltage
10
9
8
7
6
5
4
3
TJ = 125 oC
TJ = 25 oC
2
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
10 20
Figure9. UnclampedInductive
Switching Capability
7
6
5
VGS = 10 V
4
VGS = 4.5 V
3
2
1
RθJA = 78 oC/W
0
25 50
75
100 125
TC, AMBIENT TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
30
10
100 us
1
0.1
0.01
0.01
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
0.1 1 10
VDS, DRAIN to SOURCE VOLTAGE (V)
1s
10 s
DC
100 200
Figure 11. Forward Bias Safe
Operating Area
1000
VGS = 10 V
100
10
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
1
0.5
10-4 10-3 10-2 10-1
1
10 100 1000
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
5
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
6
www.fairchildsemi.com


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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
24
VGS = -10 V
20 VGS = -5 V
16
VGS = -4.5 V
VGS = - 4 V
12 PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
8 VGS = -3.5 V
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
5
4
3
2
1
0.5
0
VGS = -3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -4 V
VGS = -4.5 V
4 8 12 16
-ID, DRAIN CURRENT (A)
VGS = -5 V
VGS = -10 V
20 24
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.8
ID = -5.2 A
1.6 VGS = -10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 17. Normalized On-Resistance
vs Junction Temperature
120
ID = -5.2 A
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
100
80
60
40
20
2
TJ = 125 oC
TJ = 25 oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 18. On-Resistance vs Gate to
Source Voltage
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
20
VDS = -5 V
16
12
TJ = 150 oC
8
TJ = 25 oC
TJ = -55 oC
4
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 19. Transfer Characteristics
40
VGS = 0 V
10
1 TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
7
www.fairchildsemi.com


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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
10
ID = -5.2 A
8
VDD = -15 V
6
VDD = -20 V
4
VDD = -25 V
2
0
0 4 8 12
Qg, GATE CHARGE (nC)
16
2000
1000
Ciss
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 21. Gate Charge Characteristics
Figure 22. Capacitance vs Drain
to Source Voltage
10
9
8
7
6
5
4
3
TJ = 25 oC
2
TJ = 125 oC
1
0.1 1 10 40
tAV, TIME IN AVALANCHE (ms)
Figure 23. Unclamped Inductive
Switching Capability
6
5
4
VGS = -10 V
3
VGS = -4.5 V
2
1
RθJA = 78 oC/W
0
25 50
75
100 125
TC, AMBIENT TEMPERATURE (oC)
150
Figure 24. Maximum Continuous Drain
Current vs Ambient Temperature
30
100 us
10
1 THIS AREA IS
LIMITED BY rds(on)
1 ms
10 ms
100 ms
0.1
0.01
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
TA = 25 oC
1s
10 s
DC
0.1 1 10 100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
1000
VGS = -10 V
100
10
SINGLE PULSE
RθJA = 135 oC/W
1
0.5
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 26. Single Pulse Maximum Power
Dissipation
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
8
www.fairchildsemi.com


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Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 27. Junction-to-Ambient Transient Thermal Response Curve
1000
©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
9
www.fairchildsemi.com


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©2008 Fairchild Semiconductor Corporation
FDS4897AC Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
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