Fairchild Semiconductor Electronic Components Datasheet


FDT86106LZ

MOSFET



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FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
„ Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
„ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ HBM ESD protection level > 3 KV typical (Note 4)
„ 100% UIL tested
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench® process
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance. G-S zener
has been added to enhance ESD voltage level.
Application
„ DC - DC Conversion
„ RoHS Compliant
D
SOT-223
S
D
G
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
3.2
12
12
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
12
55
°C/W
Device Marking
86106LZ
Device
FDT86106LZ
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
FDT86106LZ Rev.C2
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
100
V
ID = 250 μA, referenced to 25 °C
71 mV/°C
VDS = 80 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1 μA
±10 μA
On Characteristics (Note 2)
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
1.0 1.5 2.2
V
ID = 250 μA, referenced to 25 °C
-5 mV/°C
VGS = 10 V, ID = 3.2 A
VGS = 4.5 V, ID = 2.7 A
VGS = 10 V, ID = 3.2 A,
TJ = 125 °C
VDS = 10 V, ID = 3.2 A
80 108
100 153 mΩ
140 189
8S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
234 315
46 65
3.1 5
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 3.2 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 50 V,
ID = 3.2 A
3.8 10 ns
1.3 10 ns
10 20 ns
1.5 10 ns
4.3 7 nC
2.4 4 nC
0.7 nC
0.9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 3.2 A
VGS = 0 V, IS = 1 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 3.2 A, di/dt = 100 A/μs
0.86 1.3
0.77 1.2
31 49
21 34
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 55 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 1 mH, IAS = 5 A, VDD = 90 V, VGS = 10 V.
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDT86106LZ Rev.C2
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
12
VGS = 10 V
VGS = 4.5 V
9 VGS = 4 V
VGS = 3.5 V
6
VGS = 3 V
3
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
5
VGS = 3 V
4
3
2
VGS = 3.5 V
VGS = 4 V
1
PULSE DURATION = 80 μs VGS = 4.5 V VGS = 10 V
DUTY CYCLE = 0.5% MAX
0
0 3 6 9 12
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = 3.2 A
1.8 VGS = 10 V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
500
ID = 3.2 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
400
300
200
TJ = 125 oC
100
0
2
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
VDS = 5 V
TJ = 150 oC
6
TJ = 25 oC
3
TJ = -55 oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
20
10 VGS = 0 V
TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
FDT86106LZ Rev.C2
3
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 3.2 A
8
VDD = 50 V
6
VDD = 25 V
4
VDD = 75 V
400
100
10
Ciss
Coss
2
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5
f = 1 MHz
VGS = 0 V
Crss
1
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
7
6
5
TJ = 25 oC
4
TJ = 100 oC
3
TJ = 125 oC
2
1
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
1
2
8
6
VGS = 10 V
4
Limited by package
VGS = 4.5 V
2
RθJC = 12 oC/W
025 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 11. Maximum Continuous Drain
Current vs Case Temperature
150
10-1
10-2 VDS = 0 V
10-3
10-4
10-5 TJ = 125 oC
10-6
10-7 TJ = 25 oC
10-8
10-9
10-10
0
5 10 15 20 25 30
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
35
20
10
100 us
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 118 oC/W
TA = 25 oC
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100
400
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
FDT86106LZ Rev.C2
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
300
100
10
1
0.5
10-4
SINGLE PULSE
RθJA = 118 oC/W
TA = 25 oC
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 13. Single Pulse Maximum Power Dissipation
100
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 118 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
FDT86106LZ Rev.C2
5
www.fairchildsemi.com


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6.70
6.20
0.10 C B
3.10
2.90
4
B
A
3.70
3.30
3.25
1.90
6.10
13
2.30
4.60
1.80 MAX
0.84
0.60
0.10 C B
1.90
0.95 2.30
LAND PATTERN RECOMMENDATION
SEE DETAIL A
C 0.10
0.00
GAGE
PLANE
0.08 C
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
10° R0.15±0.05
R0.15±0.05
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
10°
TYP
0.35
0.20
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
0.25
SEATING
PLANE
10°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1


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