Fairchild Semiconductor Electronic Components Datasheet


FDT86246

MOSFET



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December 2010
FDT86246
N-Channel Power Trench® MOSFET
150 V, 2 A, 236 mΩ
Features
General Description
„ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A
„ Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
„ Load Switch
„ Primary Switch
D
SOT-223
S
D
G
D
GDS
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
2
8
8
2.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
12
55
°C/W
Device Marking
86246
Device
FDT86246
Package
SOT-223
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
104 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.0 3.1 4.0 V
ID = 250 μA, referenced to 25 °C
-9 mV/°C
VGS = 10 V, ID = 2 A
VGS = 6 V, ID = 1.7 A
VGS = 10 V, ID = 2 A,
VDS = 10 V, ID = 2 A
TJ = 125 °C
194 236
231 329 mΩ
349 425
5S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
161 215 pF
21 30 pF
1.6 5 pF
0.9 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 2 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V,
ID = 2 A
7.8 16 ns
2.3 10 ns
4.6 10 ns
1.2 10 ns
2.9 4 nC
1.7 3
0.9 nC
0.8 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A
(Note 2)
0.84 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 2 A, di/dt = 100 A/μs
44 71 ns
31 49 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 55 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 118 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 4.0 A, VDD = 135 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
8
VGS = 10 V
VGS = 7 V
6
VGS = 6 V
4
VGS = 5.5 V
2 VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
VGS = 5 V
2.5
2.0
1.5
VGS = 5.5 V
VGS = 6 V
1.0
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5
024
VGS = 7 V VGS = 10 V
68
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.4
ID = 2 A
VGS = 10 V
2.0
1.6
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On-Resistance
vs Junction Temperature
800
ID = 2 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
600
TJ = 125 oC
400
200
TJ = 25 oC
0
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
VDS = 5 V
4
TJ = 150 oC
TJ = 25 oC
2
TJ = -55 oC
0
23456
VGS, GATE TO SOURCE VOLTAGE (V)
7
Figure 5. Transfer Characteristics
10
VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 2 A
8
6
4
VDD = 50 V
VDD = 75 V
VDD = 100 V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
500
Ciss
100
Coss
10
Crss
f = 1 MHz
VGS = 0 V
1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
7
6
5
TJ = 25 oC
4
3
TJ = 100 oC
2
TJ = 125 oC
1
0.001
0.01 0.1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
1
5
4
VGS = 10 V
3
VGS = 6 V
2
1
RθJC = 12 oC/W
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10
100 μs
1
0.1
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 118 oC/W
TA = 25 oC
0.005
0.1
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
300
SINGLE PULSE
100 RθJA = 118 oC/W
TA = 25 oC
10
1
0.510-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
0.005
10-4
SINGLE PULSE
RθJA = 118 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDT86246 Rev.C
5
www.fairchildsemi.com


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6.70
6.20
0.10 C B
3.10
2.90
4
B
A
3.70
3.30
3.25
1.90
6.10
13
2.30
4.60
1.80 MAX
0.84
0.60
0.10 C B
1.90
0.95 2.30
LAND PATTERN RECOMMENDATION
SEE DETAIL A
C 0.10
0.00
GAGE
PLANE
0.08 C
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
10° R0.15±0.05
R0.15±0.05
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
10°
TYP
0.35
0.20
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
0.25
SEATING
PLANE
10°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1


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