Fairchild Semiconductor Electronic Components Datasheet


FDC637BNZ

MOSFET



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FDC637BNZ
N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 6.2A, 24m
Features
General Description
September 2007
tm
„ Max rDS(on) = 24mat VGS = 4.5V, ID = 6.2A
„ Max rDS(on) = 32mat VGS = 2.5V, ID = 5.2A
„ Fast switching speed
„ Low gate charge (8nC typical)
„ High performance trench technology for extremely low rDS(on)
„ SuperSOT™–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
„ HBM ESD protection level > 2kV typical (Note 3)
„ Manufactured using green packaging material
„ Halide-Free
„ RoHS Compliant
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
„ DC - DC Conversion
„ Load switch
„ Battery Protection
S
D
D
D1
6D
Pin 1
G
D
D
D2
G3
5D
4S
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
6.2
20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
VDS = 16V, VGS = 0V
VGS = ±12V, VDS = 0V
20 V
10 mVC
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 4.5V, ID = 6.2A
VGS = 2.5V, ID = 5.2A
VGS = 4.5V, ID = 6.2A, TJ = 125°C
VDD = 5V, ID = 6.2A
0.6 0.8 1.5
V
-3 mV/°C
21 24
26 32 m
30 41
27 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS = 0V,
f = 1MHz
f = 1MHz
670 895
160 215
115 175
2.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10V, ID = 6.2A
VGS = 4.5V, RGEN = 6
VGS = 4.5V, VDD = 10V,
ID = 6.2A
8 16 ns
6 12 ns
22 36 ns
6 12 ns
8 12 nC
1.3 nC
2.2 nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
1.3 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.3A
(Note 2)
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 6.2A, di/dt = 100A/µs
15 27 ns
5 10 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a. 78°C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
20
16 VGS = 4.5V
VGS = 2.5V
12
8
VGS = 2V
VGS = 1.8V
4 VGS = 1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4.0
3.5
VGS = 1.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.0
VGS = 1.8V
2.5
2.0 VGS = 2V
1.5 VGS = 2.5V
1.0
0.5
0
4 8 12
ID, DRAIN CURRENT(A)
VGS = 4.5V
16 20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 6.2A
VGS = 4.5V
1.4
150
ID = 6.2A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
120
1.2 90
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
16
VDS = 5V
12
8 TJ = 150oC
4 TJ = 25oC
TJ = -55oC
0
0.0 0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.5
60 TJ = 125oC
30
0
1.0
TJ = 25oC
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
20
10 VGS = 0V
1
0.1
0.01
TJ = 150oC
TJ = 25oC
TJ = -55oC
1E-3
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
4.5
4.0 ID = 6.2A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
1.5
VDD = 5V
VDD = 10V
VDD = 15V
3.0 4.5 6.0
Qg, GATE CHARGE(nC)
7.5
9.0
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
100
f = 1MHz
Crss
VGS = 0V
50
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. CapacitancevsDrain
to Source Voltage
105
104 VDS = 0V
103
102
101 TJ = 150oC
100
10-1 TJ = 25oC
10-2
10-3
0
3 6 9 12 15
VGS, GATE TO SOURCE VOLTAGE (V)
18
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
30
10
100us
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 156oC/W
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
1ms
10ms
100ms
1s
10s
DC
50
Figure 10. Forward Bias Safe
Operating Area
1000
VGS = 4.5V
100
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
10
1
0.5
10-4
10-3 10-2 10-1 100
t, PULSE WIDTH (s)
101
Figure 11. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
4
102 103
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 156oC/W
1E-3
10-4
10-3
10-2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100
t, RECTANGULAR PULSE DURATION (s)
101
102
Figure 12. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
5
www.fairchildsemi.com


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TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
SuperSOT™-8
SyncFET™
The Power Franchise®
CTL™
Current Transfer Logic™
EcoSPARK®
®
Fairchild®
Fairchild Semiconductor®
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power220®
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
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UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
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PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
©2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
Definition
tm
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
www.fairchildsemi.com


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