Fairchild Semiconductor Electronic Components Datasheet


FDC610PZ

MOSFET



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FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42m
Features
General Description
August 2007
tm
„ Max rDS(on) = 42mat VGS = –10V, ID = –4.9A
„ Max rDS(on) = 75mat VGS = –4.5V, ID = –3.7A
„ Low gate charge (17nC typical).
„ High performance trench technology for extremely low rDS(on).
„ SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
„ RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
Application
„ DC - DC Conversion
S
D
D
Pin 1
G
D
D
SuperSOTTM -6
D1
D2
G 33
6D
5D
4S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–30
±25
–4.9
–20
1.6
0.8
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
78
156
°C/W
Device Marking
.610Z
Device
FDC610PZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
FDC610PZ Rev.B
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = –250µA, VGS = 0V
ID = –250µA, referenced to 25°C
VDS = –24V, VGS = 0V
VGS = ±25V, VDS = 0V
–30 V
–22 mVC
–1 µA
±10 µA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–1 –2.2 –3
V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
6 mV/°C
VGS = –10V, ID = –4.9A
36 42
rDS(on)
Static Drain to Source On Resistance VGS = –4.5V, ID = –3.7A
58 75 m
VGS = –10V, ID = –4.9A, TJ = 125°C
50 60
gFS Forward Transconductance
VDD = –10V, ID = –4.9A
15 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = –15V, VGS = 0V,
f = 1MHz
f = 1MHz
755 1005
145 195
125 190
13
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = –15V, ID = –4.9A
VGS = –10V, RGEN = 6
VGS = 0V to –10V
VGS = 0V to –4.5V
VDD = –15V,
ID = –4.9A
7 14 ns
4 10 ns
33 53 ns
23 37 ns
17 24 nC
9 13 nC
2.9 nC
4.3 nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
–1.3 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A (Note 2)
–0.8 –1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = –4.9A, di/dt = 100A/µs
19 35 ns
9 18 nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 78°C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDC610PZ Rev.B
2
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Typical Characteristics TJ = 25°C unless otherwise noted
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15 VGS = -10V
VGS = -5V
VGS = -4.5V
10
VGS = -4V
5
VGS = -3.5V
0
0123
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
4
5.0
4.5 VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4.0
3.5 VGS = -4V
3.0
2.5 VGS = -4.5V
2.0
1.5 VGS = -5V
1.0
0.5
0
5 10
-ID, DRAIN CURRENT(A)
VGS = -10V
15 20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -4.9A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
-75
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
200
ID = -4.9A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
150
100
TJ = 125oC
50
TJ = 25oC
0
3456789
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15 VDD = -5V
10
TJ = 150oC
5
TJ = 25oC
TJ = -55oC
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
20
10 VGS = 0V
1
TJ = 150oC
0.1
0.01
TJ = 25oC
1E-3
0.0
TJ = -55oC
0.2 0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDC610PZ Rev.B
3 www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -4.9A
8
6
4
VDD = -10V
VDD = -15V
VDD = -20V
2
0
0 4 8 12 16
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
20
2000
1000
Ciss
Coss
Crss
100
f = 1MHz
VGS = 0V
50
0.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
105
104 VDS = 0V
103
102
101 TJ = 150oC
100
10-1 TJ = 25oC
10-2
10-3
0
5 10 15 20 25 30
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
35
30
10 100us
1
SINGLE PULSE
TJ = MAX RATED
0.1 RθJA = 156oC/W
TA = 25oC
THIS AREA IS
LIMITED BY rDS(on)
0.01
0.1 1
1ms
10ms
100ms
1s
10s
DC
10 100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
1000
VGS = -10V
100
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
10
1
0.5
10-4
FDC610PZ Rev.B
10-3 10-2 10-1 100
t, PULSE WIDTH (s)
101
Figure 11. Single Pulse Maximum Power Dissipation
4
102 103
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Typical Characteristics TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
1E-3
10-4
SINGLE PULSE
RθJA = 156oC/W
10-3
10-2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-1 100
t, RECTANGULAR PULSE DURATION (s)
101
102
Figure 12. Transient Thermal Response Curve
103
FDC610PZ Rev.B
5 www.fairchildsemi.com


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OPTOPLANAR®
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PDP-SPM™
Power220®
Power247®
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Power-SPM
PowerTrench®
Programmable Active Droop
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SMART START
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com


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