Fairchild Semiconductor Electronic Components Datasheet


FDC658AP

MOSFET



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August 2015
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m:
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
„ Battery management
„ Load switch
„ Battery protection
„ DC/DC conversion
Features
„ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
„ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
„ Low Gate Charge
„ High performance trench technology for extremely low
rDS(on)
„ RoHS Compliant
S
D
D
1
PIN 1
G
D
D
SuperSOTTM-6
2
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
RTJA
RTJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
.58A
Device
FDC658AP
Reel Size
7inch
Tape Width
8mm
6
5
4
Ratings
-30
r25
-4
-20
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
78 °C/W
30 °C/W
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDC658AP Rev. 1.3
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
ID = -250PA, VGS = 0V
ID = -250PA,
Referenced to 25°C
VGS = 0V, VDS = -24V
VGS = r25V, VDS = 0V
-30 V
-22 mV/°C
-1
r100
PA
nA
On Characteristics (Note 2)
VGS(TH)
'VGS(TH)
'TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain-Source On-Resistance
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
VDS = VGS, ID = -250PA
ID = -250PA,
Referenced to 25°C
ID = -4A, VGS = -10V
ID = -3.4A, VGS = -4.5V
ID = -4A, VGS = -10V,
TJ = 125°C
VGS = -10V, VDS = -5V
ID = -4A, VDS = -5V
-1 -1.8 -3
V
4 mV/°C
44 50
67 75 m:
60 70
-20
8.4
A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
470 680
126 180
61 90
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -15V, ID = -1A
VGS = -10V, RGEN = 6:
VDS = -15V, ID = -4A,
VGS = -5V
7 14 ns
12 22 ns
16 29 ns
6 12 ns
6 8.1 nC
2.1 nC
2 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2)
-0.77 -1.2
V
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 78oC/W when mounted on a
1 in2 pad of 2 oz copper
b) 156oC/W whe mounted on a
minimum pad of 2 oz copper
Scale 1: 1 on letter size paper
2: Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%
FDC658AP Rev. 1.3
2 www.fairchildsemi.com


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Typical Characteristics
20
VGS = -10V
-6.0V
15
-5.0V
-4.5V
-4.0V
10
-3.5V
5
-3.0V
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
1.6
ID = -4.0A
VGS = -10V
1.4
2
1.8
VGS = -4.5V
1.6
-5.0V
1.4
-6.0V
1.2 -7.0V
-8.0V
-10V
1
0.8
0
4 8 12 16
-ID, DRAIN CURRENT (A)
20
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
0.22
ID = -2.0A
0.18
1.2 0.14
TJ = 125oC
1 0.1
TJ = 25oC
0.8 0.06
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On-Resistance vs Junction
Temperature
0.02
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
15
VDS = -5V
12
9
6
3
TJ = -55oC
25oC
125oC
10
VGS = 0V
1
0.1
TJ = 125oC
0.01
0.001
25oC
-55oC
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0.0001
5 0 0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
FDC658AP Rev. 1.3
3 www.fairchildsemi.com


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Typical Characteristics
10
ID = -4A
8
6
VDS = -5V
-10V
-15V
4
2
0
02468
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10
600
f = 1 MHz
Ciss VGS = 0 V
450
300
Coss
150
Crss
0
06
12 18 24 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
100
rDS(on) LIMIT
10
100us
1ms
1 10ms
VGS = -10V
SINGLE PULSE
0.1 RșJA = 156oC/W
TA = 25oC
100ms
1s
DC
0.01
0.1 1 10 100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
10
SINGLE PULSE
RșJA = 156°C/W
8 TA = 25°C
6
4
2
0
0.01 0.1 1 10
t, PULSE WIDTH (s)
100
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RșJA(t) = r(t) x RșJA
RșJA = 156oC/W
P(pk)
t1
t2
TJ - TA = P x RșJA(t)
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01 0.1
1
t, RECTANGULAR PULSE DURATION
10
100 1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC658AP Rev. 1.3
4 www.fairchildsemi.com


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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FastvCore
FETBench
FPS
F-PFS
FRFET®
Global Power ResourceSM
GreenBridge
Green FPS
Green FPSe-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
Making Small Speakers Sound Louder
and Better™
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid®
MTi®
MTx®
MVN®
mWSaver®
OptoHiT
OPTOLOGIC®
OPTOPLANAR®
®
Power Supply WebDesigner
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
μSerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
仙童
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification Product Status
Advance Information Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I76
© Fairchild Semiconductor Corporation
www.fairchildsemi.com


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