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MMA040AA

DC-28 GHz GaAs MMIC Distributed Amplifier



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MMA040AA Datasheet
DC–28 GHz GaAs MMIC Distributed Amplifier


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DC–28 GHz GaAs MMIC Distributed Amplifier
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more at www.microsemi.com.
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DC–28 GHz GaAs MMIC Distributed Amplifier
1 Revision History
The revision history describes the changes that were implemented in the document. The changes
are listed by revision, starting with the most current publication.
1.1 Revision 1.0
Revision 1.0 was the first publication of this document.
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DC–28 GHz GaAs MMIC Distributed Amplifier
Contents
1 Revision History........................................................................................................................ 3
1.1 Revision 1.0................................................................................................................................................ 3
2 Product Overview .................................................................................................................... 7
2.1 Functional Block Diagram .......................................................................................................................... 7
2.2 Applications ............................................................................................................................................... 7
2.3 Key Features............................................................................................................................................... 7
3 Electrical Specifications............................................................................................................ 9
3.1 Absolute Maximum Ratings ....................................................................................................................... 9
3.2 Typical Electrical Performance ................................................................................................................. 10
3.3 Typical Performance Curves..................................................................................................................... 11
4 Chip Outline Drawing, Die Packaging, Bond Pad, and Assembly Information....................... 20
4.1 Chip Outline Drawing............................................................................................................................... 20
4.2 Die Packaging Information ....................................................................................................................... 20
4.3 Bond Pad Information.............................................................................................................................. 21
4.4 Assembly Diagram ................................................................................................................................... 21
5 Handling and Die Attachment Recommendations................................................................. 22
6 Ordering Information ............................................................................................................. 23
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DC–28 GHz GaAs MMIC Distributed Amplifier
List of Figures
Figure 1 Functional Block Diagram ..............................................................................................................................7
Figure 2 Broadband Gain (VDD = 8 V, IDD = 60 mA, T = 25 °C) .....................................................................................11
Figure 3 Gain vs. Temperature (VDD = 8 V, IDD = 60 mA).............................................................................................11
Figure 4 Gain vs. VDD (IDD = 60 mA, T = 25 °C).............................................................................................................12
Figure 5 Gain vs. IDD (VDD = 8 V, T = 25 °C) ..................................................................................................................12
Figure 6 Input Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 °C) ...................................................................................13
Figure 7 Input Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA)........................................................................13
Figure 8 Output Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 °C) ................................................................................14
Figure 9 Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C) .................................................................14
Figure 10 Noise Figure vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C) ..............................................................15
Figure 11 Noise Figure vs. VDD (IDD = 60 mA, T = 25 °C) ..............................................................................................15
Figure 12 Noise Figure vs. IDD (VDD = 6 V, T = 25 °C) ...................................................................................................16
Figure 13 P1dB Output Power vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C) ..................................................16
Figure 14 P1dB Output Power vs. VDD (IDD = 60 mA, T = 25 °C) ..................................................................................17
Figure 15 P1dB Output Power vs. IDD (VDD = 8 V, T = 25 °C) .......................................................................................17
Figure 16 Output IP3 vs. Temperature (VDD = 8 V, IDD = 60 mA).................................................................................18
Figure 17 Output IP3 vs. VDD (IDD = 60 mA, T = 25 °C).................................................................................................18
Figure 18 Output IP3 vs. IDD (VDD = 8 V, T = 25 °C)......................................................................................................19
Figure 19 Chip Outline ...............................................................................................................................................20
Figure 20 Assembly Diagram .....................................................................................................................................21
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DC–28 GHz GaAs MMIC Distributed Amplifier
List of Tables
Table 1 Absolute Maximum Ratings ............................................................................................................................9
Table 2 Typical Electrical Performance ......................................................................................................................10
Table 3 Die Packaging Information ............................................................................................................................20
Table 4 Bond Pad Information ...................................................................................................................................21
Table 5 Ordering Information ....................................................................................................................................23
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DC–28 GHz GaAs MMIC Distributed Amplifier
2 Product Overview
MMA040AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC)
pseudomorphic high-electron mobility transistor (pHEMT) low-noise distributed amplifier die that
operates between DC and 28 GHz. The amplifier provides flat gain of 16.5 dB, 2.5 dB noise figure,
and 27 dBm OIP3, while requiring only 60 mA from a 8 V supply. The MMA040AA amplifier features
compact die size and I/Os that are internally matched to 50 Ω, facilitating easy integration into
multi-chip modules (MCMs).
2.1 Functional Block Diagram
The following illustration shows the primary functional blocks of the MMA040AA device.
Figure 1 Functional Block Diagram
2.2 Applications
The MMA040AA device is designed for the following applications:
Test instrumentation
Telecom infrastructure
Microwave radio and VSAT
Microwave communications
2.3 Key Features
The following are key features of the MMA040AA device:
Frequency range: DC to 28 GHz
Flat gain: 16.5 dB
High IP3: 27 dBm
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DC–28 GHz GaAs MMIC Distributed Amplifier
Low noise: 2.5 dB at 10 GHz
Supply voltage: 7 V at 60 mA
50 Ω matched I/O
Compact die size: 3 mm × 1.32 mm × 0.1 mm
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DC–28 GHz GaAs MMIC Distributed Amplifier
3 Electrical Specifications
3.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MMA040AA device.
Table 1 Absolute Maximum Ratings
Parameter
Storage temperature
Operating temperature
Drain bias voltage, (VD)
Gate bias voltages, (VG1 and VG2)
VD current (IDD)
RF input power
DC power dissipation (T = 85 °C)
Channel temperature
Thermal impedance
ESD sensitivity (HBM)
Rating
–65 to 150 °C
–55 to 85 °C
9V
–2 to 0.5 V
300 mA
22 dBm
1.1 W
150 °C
60 °C/W
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DC–28 GHz GaAs MMIC Distributed Amplifier
3.2 Typical Electrical Performance
The following table shows the typical electrical performance of the MMA040AA device at 25 °C,
where VDD is 8 V and IDD is 60 mA. All measurements are derived from the RF probed die according to
the assembly diagram shown in section 4.4, unless otherwise indicated.
Table 2 Typical Electrical Performance
Parameter
Operational frequency range
Gain
Gain flatness
Gain variation over temperature
Noise figure
Input return loss
Output return loss
P1dB
Psat
OIP3
VDD (drain voltage supply)
IDD (drain current)
Frequency Range
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
DC–6 GHz
6 GHz–12 GHz
12 GHz–20 GHz
Min
DC
15.5
15.5
15.5
15
15.5
14
Typ Max Units
28 GHz
16.5 dB
16.5 dB
16.5 dB
±0.2 dB
±0.2 dB
±0.2 dB
0.007
dB/°C
0.007
dB/°C
0.017
dB/°C
2.5 3
dB
2 2.5 dB
3 3.5 dB
15 dB
15 dB
12 dB
12 dB
15 dB
18 dB
16 dBm
16 dBm
15 dBm
17 dBm
18 dBm
17 dBm
27 dBm
27 dBm
27.5 dBm
7V
150 mA
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3.3 Typical Performance Curves
The following graphs show the typical performance curves of the MMA040AA device at 25 °C, unless
otherwise indicated.
Figure 2 Broadband Gain (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 3 Gain vs. Temperature (VDD = 8 V, IDD = 60 mA)
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Figure 4 Gain vs. VDD (IDD = 60 mA, T = 25 °C)
Figure 5 Gain vs. IDD (VDD = 8 V, T = 25 °C)
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Figure 6 Input Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 7 Input Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA)
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Figure 8 Output Return Loss (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 9 Return Loss vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C)
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Figure 10 Noise Figure vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C)
Figure 11 Noise Figure vs. VDD (IDD = 60 mA, T = 25 °C)
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Figure 12 Noise Figure vs. IDD (VDD = 6 V, T = 25 °C)
Figure 13 P1dB Output Power vs. Temperature (VDD = 8 V, IDD = 60 mA, T = 25 °C)
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Figure 14 P1dB Output Power vs. VDD (IDD = 60 mA, T = 25 °C)
Figure 15 P1dB Output Power vs. IDD (VDD = 8 V, T = 25 °C)
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Figure 16 Output IP3 vs. Temperature (VDD = 8 V, IDD = 60 mA)
Figure 17 Output IP3 vs. VDD (IDD = 60 mA, T = 25 °C)
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Figure 18 Output IP3 vs. IDD (VDD = 8 V, T = 25 °C)
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4 Chip Outline Drawing, Die Packaging, Bond Pad, and
Assembly Information
4.1 Chip Outline Drawing
The following illustration shows the chip outline of the MMA040AA device. Dimensions are in µm
and are relative to the zero datum locations shown in the drawing. The minimum bond pad size is
100 μm × 100 μm. Both the bond pad surface and the backside metal are 3 μm gold. The die
thickness is 100 μm. The backside is the DC/RF ground. The airbridge keepout region is in
crosshatch, and the unlabeled pads should not be bonded.
Figure 19 Chip Outline
4.2 Die Packaging Information
The following table shows the chip outline of the MMA040AA device. For additional packaging
information, contact your Microsemi sales representative.
Table 3 Die Packaging Information
Standard Format
Waffle pack
50–100 pieces per pack
Optional Format
Gel pack
50 pieces per pack
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4.3 Bond Pad Information
The following table shows the bond pad information of the MMA040AA device.
Table 4 Bond Pad Information
Bond Pad Number
1, 3, 7, 8, 10, 13
2
4, 5, 6
Bond Pad Name
GND
RFIN
VD1, VD1A, VD1B
9
14, 12, 11
Backside paddle
RFOUT
VG1, VG1A, VG1B
RF/DC GND
Description
Die bottom must be connected to RF/DC ground.
This pad is DC-coupled and matched to 50 Ω.
Power supply voltage for the amplifier. External bypass
capacitors are required.
This pad is DC-coupled and matched to 50 Ω.
Gate control for amplifier. Adjust to achieve IDD = 60 mA.
RF/DC ground.
4.4 Assembly Diagram
The following figure shows the assembly diagram of the MMA040AA device. In the die test assembly
shown, both RFIN and RFOUT ports should utilize bias tees or DC blocks to isolate external circuits
from the IC. VDD to the MMA040AA die is supplied through DC bypass caps of >10 nF (the actual
value depends on the low-frequency bandwidth requirements of the application).
Figure 20 Assembly Diagram
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5 Handling and Die Attachment Recommendations
Gallium arsenide integrated circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. It is recommended to follow all procedures and guidelines outlined in
the Microsemi application note AN01 GaAs MMIC Handling and Die Attach Recommendations.
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6 Ordering Information
The following table shows the ordering information for the MMA040AA device.
Table 5 Ordering Information
Part Number
MMA040AA
Package
Die
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