Fairchild Semiconductor Electronic Components Datasheet


FDN86246

MOSFET



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December 2010
FDN86246
N-Channel PowerTrench® MOSFET
150 V, 1.6 A, 261 m:
Features
General Description
„ Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A
„ Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.4 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Fast switching speed
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
„ PD Switch
„ 100% UIL tested
„ RoHS Compliant
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
150
±20
1.6
6
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
75
80
°C/W
Device Marking
246
Device
FDN86246
Package
SSOT-3
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 PA, VGS = 0 V
ID = 250 PA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150
V
106 mV/°C
1
±100
PA
nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 PA
ID = 250 PA, referenced to 25 °C
VGS = 10 V, ID = 1.6 A
VGS = 6 V, ID = 1.4 A
VGS = 10 V, ID = 1.6 A, TJ = 125 °C
VDS = 10 V, ID = 1.6 A
2
3.4 4
V
-9 mV/°C
195 261
242 359 m:
359 481
4S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
168 225
21 30
1.6 5
0.9
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 1.6 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 75 V,
ID = 1.6 A
4.5 10
ns
1.1 10 ns
8 16 ns
2.9 10 ns
2.9 5 nC
1.6 3 nC
0.9 nC
0.8 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.6 A (Note 2)
0.83 1.3
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 1.6 A, di/dt = 100 A/Ps
44 70 ns
29 47 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 80 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 180 °C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 10 V
5
4
3
2
VGS = 7 V
VGS = 6 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 5.5 V
1
VGS = 5 V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
VGS = 5 V
4
VGS = 5.5 V
3
VGS = 6 V
2
VGS = 7 V
1
PULSE DURATION = 80 Ps
VGS = 10 V
DUTY CYCLE = 0.5% MAX
0
0123456
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
2.0 ID = 1.6 A
VGS = 10 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
800
ID = 1.6 A
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
600
TJ = 125 oC
400
200
TJ = 25 oC
0
456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
6
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
5
VDS = 5 V
4
3
TJ = 150 oC
2
TJ = 25 oC
1
TJ = -55 oC
0
234567
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
VGS = 0 V
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 1.6 A
8
6
4
VDD = 50 V
VDD = 75 V
VDD = 100 V
300
100
10
Ciss
Coss
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3.5
3.0
2.5
TJ = 25 oC
2.0
TJ = 100 oC
1.5
TJ = 125 oC
1.0
0.01
0.1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
1
200
100
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
10
1 100 us
1 ms
0.1 THIS AREA IS
LIMITED BY rDS(on)
0.01
0.001
0.1
SINGLE PULSE
TJ = MAX RATED
RTJA = 180 oC/W
TA = 25 oC
1 10
10 ms
100 ms
1s
10 s
DC
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe
Operating Area
SINGLE PULSE
RTJA = 180 oC/W
TA = 25 oC
10
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
10
Figure 11. Single Pulse Maximum Power Dissipation
100
1000
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 180 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
5
www.fairchildsemi.com


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©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I51
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