Fairchild Semiconductor Electronic Components Datasheet


FDG327NZ

MOSFET



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October 2015
FDG327NZ
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
DC/DC converter
Power management
Load switch
Features
1.5 A, 20 V.
RDS(ON) = 90 m@ VGS = 4.5 V.
RDS(ON) = 100 m@ VGS = 2.5 V
RDS(ON) = 140 m@ VGS = 1.8 V
Fast switching speed
Low gate charge
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability.
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.37
FDG327NZ
7’’
Ratings
20
±8
1.5
6
0.42
0.38
–55 to +150
300
333
Tape width
8mm
Units
V
A
W
°C
°C/W
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDG327NZ Rev 1.2 (W)


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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = ± 8 V,
VGS = 0 V
VDS = 0 V
20 V
11 mV/°C
1 µA
±10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
0.4 0.7
–2
1.5 V
mV/°C
VGS = 4.5 V, ID = 1.5 A
VGS = 2.5 V, ID = 1.4 A
VGS = 1.8 V, ID = 1.2 A
VGS = 4.5 V, ID = 1.5 A, TJ =125°C
VGS = 4.5V, VDS = 5 V
VDS = 10 V, ID = 1.5 A
3
68 90
77 100
90 140
86 123
9
m
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V
VGS = 15 mV, f = 1.0 MHz
412 pF
81 pF
44 pF
1.9
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 10 V,
VGS = 4.5 V
ID = 1.5 A,
6.2 13
2.3 10
18 33
2.9 10
4.2 6
0.4
1
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 0.32 A (Note 2)
trr
Diode Reverse Recovery Time
IF = 1.5 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge
0.6 1.2
4
2
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 300°C/W when
mounted on a 1in2 pad
of 2 oz copper.
b) 333°C/W when mounted
on a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG327NZ Rev 1.2 (W)


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Typical Characteristics
10
VGS= 4.5V
2.5V
8V
6
4
2.0V
1.8V
1.5V
2
0
0123
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.5
ID = 1.5A
1.4 VGS = 4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
10
VDS = 5.0V
8
6
TA = -55oC
25oC
125oC
4
2
0
0.5
1 1.5 2
VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics.
1.8
VGS=1.5V
1.6
1.4 1.8V
2.0V
1.2
2.5V
3.0V
1 4.5V
0.8
0
2468
ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.22
0.17
0.12
0.07
TA = 25oC
TA = 125oC
ID = 0.8A
0.02
0.5
1.5 2.5 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1
0.1
0.01
VGS = 0V
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG327NZ Rev 1.2 (W)


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Typical Characteristics
5
ID = 1.5A
4
3
VDS = 5V
15V
10V
2
1
0
012345
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
100µs
1ms
10ms
1 100ms
1s
10s
DC
0.1 VGS = 4.5V
SINGLE PULSE
RθJA = 333oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
600
f = 1 MHz
VGS = 0 V
500
CISS
400
300
200
100
CRSS
0
0
COSS
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 333°C/W
TA = 25°C
15
10
5
0
0.0001 0.001 0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 333oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG327NZ Rev 1.2 (W)


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