Fairchild Semiconductor Electronic Components Datasheet


FDG8842CZ

MOSFET



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FDG8842CZ
Complementary PowerTrench® MOSFET
April 2007
tm
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
Q1: N-Channel
„ Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
„ Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
Q2: P-Channel
„ Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A
„ Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A
„ Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th) <1.5V)
„ Very small package outline SC70-6
General Description
These N & P-Channel logic level enhancement mode field effect
transistors are produced using Fairchild’s proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage applica-
tions as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required, this dual
digital FET can replace several different digital transistors, with
different bias resistor values.
„ RoHS Compliant
S2
G2
D1
SC70-6
Pin 1
D2
G1
S1
S1 Q1
G1
D2 Q2
D1
G2
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient Single operation
Thermal Resistance, Junction to Ambient Single operation
Package Marking and Ordering Information
Device Marking
.42
Device
FDG8842CZ
Reel Size
7”
(Note 1a)
(Note 1b)
Q1 Q2
30 –25
±12 –8
0.75 –0.41
2.2 –1.2
0.36
0.30
–55 to +150
Units
V
V
A
W
°C
(Note 1a)
(Note 1b)
350
415
°C/W
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
ID = –250μA, VGS = 0V
ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C
VDS = 24V, VGS = 0V
VDS = –20V, VGS = 0V
VGS = ±12V, VDS= 0V
VGS = –8V, VDS= 0V
Q1 30
Q2 –25
Q1 25
Q2 –21
Q1
Q2
Q1
Q2
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On
Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = VDS, ID = –250μA
ID = 250μA, referenced to 25°C
ID = –250μA, referenced to 25°C
VGS = 4.5V, ID = 0.75A
VGS = 2.7V, ID = 0.67A
VGS = 4.5V, ID = 0.75A ,TJ = 125°C
VGS = –4.5V, ID = –0.41A
VGS = –2.7V, ID = –0.25A
VGS = –4.5V, ID = –0.41A ,TJ = 125°C
VDS = 5V, ID = 0.75A
VDS = –5V, ID = –0.41A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.65
–0.65
1.0
–0.8
–3.0
1.8
0.25
0.29
0.36
0.87
1.20
1.22
3
8
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Q1
VDS = 10V, VGS = 0V, f= 1MHZ
Q2
VDS = –10V, VGS = 0V, f= 1MHZ
Q1
Q2
Q1
Q2
Q1
Q2
90
70
20
30
15
15
Switching Characteristics (note 2)
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 5V, ID = 0.5A,
VGS = 4.5V,RGEN = 6Ω
Q2
VDD = –5V, ID = –0.5A,
VGS = –4.5V,RGEN = 6Ω
Q1
VGS =4.5V, VDD = 5V, ID = 0.75A
Q2
VGS = –4.5V, VDD = –5V, ID = –0.41A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
4
6
1
16
9
35
1
40
1.03
1.20
0.29
0.31
0.17
0.22
Max Units
V
1
–1
±10
–100
mV/°C
μA
μA
nA
1.5
–1.5
0.4
0.5
0.6
1.1
1.5
1.9
V
mV/°C
Ω
S
120
100
pF
30
40
pF
25
25
pF
10
12
10
29
18
56
10
64
1.44
1.68
ns
ns
ns
ns
nC
nC
nC
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
2
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD
Source to Drain Diode
Forward Voltage
VGS = 0V, IS = 0.3A
VGS = 0V, IS = –0.3A
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
0.76
–0.84
0.3
–0.3
1.2
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
a. 350°C/W when mounted on a
1 in2 pad of 2 oz copper .
b. 415°C/W when mounted on a minimum pad
of 2 oz copper.
Scale 1:1 on letter size paper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
3
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2.20
VGS = 4.5V
1.76
VGS = 2.7V
VGS = 2.0V
1.32
0.88
0.44
VGS =1.8V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 1.5V
0.00
0.0
0.5 1.0 1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2.0
2.6
VGS = 1.8V
2.2
VGS = 2.0V
1.8
1.4 VGS = 3.5V
VGS = 2.7V
1.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.6
0.00 0.44 0.88
1.32
ID, DRAIN CURRENT(A)
VGS = 4.5V
1.76 2.20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 0.75A
1.4 VGS = 4.5V
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On - Resistance
vs Junction Temperature
150
2.20
1.76
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.32
VDD = 5V
0.88
TJ = 150oC
0.44
TJ = 25oC
0.00
0.0
TJ = -55oC
0.5 1.0 1.5 2.0
VGS, GATE TO SOURCE VOLTAGE (V)
2.5
Figure 5. Transfer Characteristics
0.8
ID =0.38A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.6
TJ = 125oC
0.4
TJ = 25oC
0.2
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
2
1 VGS = 0V
5
0.1 TJ = 150oC
0.01
TJ = 25oC
0.001
0.2
TJ = -55oC
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
4
www.fairchildsemi.com


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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
5
ID = 0.22A
4
3 VDD = 5V
2
VDD = 10V
VDD = 15V
200
100
10
Ciss
Coss
Crss
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
f = 1MHz
VGS = 0V
01.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
30
4
1
LIMITED
r DS(on)
100μs
1ms
0.1 10ms
SINGLE PULSE
0.01
TJ = MAX RATED
RθJA = 415OC/W
TA = 25OC
0.005
0.1
1
100ms
1s
DC
10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
50
SINGLE PULSE
RθJA= 415OC/W
10 TA = 25OC
1
0.1
0.0001 0.001 0.01 0.1 1 10 100 1000
t, PULSE WIDTH (s)
Figure 10. Single Pulse Maximum Power
Dissipation
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01 SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 415oC/W
0.0001
0.001
0.01 0.1
1
t, RECTANGULAR PULSE DURATION (s)
10
Figure 11. Transient Thermal Response Curve
100 1000
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
5
www.fairchildsemi.com


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Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
1.2
VGS = -4.5V
0.9
VGS = -3.5V
VGS = -2.7V
VGS = -2.5V
0.6 VGS = -2.0V
0.3 PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.0 VGS = -1.5V
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. On Region Characteristics
1.6
ID = -0.41A
1.4 VGS = -4.5V
1.2
1.0
0.8
0.6
-50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. Normalized On Resistance
vs Junction Temperature
5
VGS = -1.5V
4
VGS = -2.0V
3
2
1
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -2.5V
VGS = -2.7V
VGS = -3.5V
VGS = -4.5V
0
0.0 0.3 0.6 0.9 1.2
-ID, DRAIN CURRENT(A)
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
4
ID =-0.22A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
3
2
TJ = 125oC
1
TJ = 25oC
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
5.0
0.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VDS = -5V
0.4
TJ = -55oC
0.2
TJ = 150oC
TJ = 25oC
0.0
0.5
1.0 1.5 2.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics
2.5
3
VGS = 0V
1
0.1 TJ = 150oC
TJ = 25oC
0.01
TJ = -55oC
0.001
0.2
0.4 0.6 0.8 1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
6
www.fairchildsemi.com


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Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted
5
ID = -0.41A
4
200
100
Ciss
3 VDD = -5V
VDD = -10V
2 VDD = -15V
1
0
0.0 0.4 0.8 1.2 1.6
Qg, GATE CHARGE(nC)
Figure 19. Gate Charge Characteristics
Coss
10
Crss
f = 1MHz
VGS = 0V
01.1 1 10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Capacitance vs Drain
to Source Voltage
25
3
1 LIMITED
r DS(on)
1ms
10ms
0.1 SINGLE PULSE
TJ = MAX RATED
RθJA = 415oC/W
TA = 25oC
0.01
0.3
1
100ms
1s
DC
10 50
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Forward Bias Safe
Operating Area
20 SINGLE PULSE
10 RθJA= 415OC/W
TA = 25OC
1
0.1
0.001 0.01
0.1 1 10
t, PULSE WIDTH (s)
100
Figure 22. Single Pulse Maximum Power
Dissipation
1000
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 415oC/W
0.01
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 23. Transient Thermal Response Curve
102
103
©2007 Fairchild Semiconductor Corporation
FDG8842CZ Rev.B
7
www.fairchildsemi.com


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TRADEMARKS
tm
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx®
Across the board. Around the world™
ActiveArray™
Bottomless™
i-Lo
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
Build it Now™
MICROCOUPLER™
QS™
TinyPower™
CoolFET™
MicroPak™
QT Optoelectronics™
TinyWire™
CROSSVOLT
MICROWIRE™
Quiet Series™
TruTranslation™
CTL™
Current Transfer Logic™
Motion-SPM™
MSX™
RapidConfigure™
RapidConnect™
µSerDes™
UHC®
DOME™
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EcoSPARK®
EnSigna™
FACT Quiet Series™
FACT®
FAST®
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR®
PACMAN™
PDP-SPM™
ScalarPump™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
UniFET™
VCX™
Wire™
FASTr™
FPS™
FRFET®
GlobalOptoisolator
POP™
Power220®
Power247®
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SuperSOT™-8
SyncFET™
TCM™
The Power Franchise®
GTO
HiSeC
PowerSaver™
tm
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Formative or In Design
Preliminary
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Obsolete
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This datasheet contains the design specifications for product
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This datasheet contains preliminary data; supplementary data will
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©2007 Fairchild Semiconductor Corporation
Rev. I26
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