Fairchild Semiconductor Electronic Components Datasheet


2N7002VA

MOSFET



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January 2015
2N7002V / 2N7002VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free by Design/RoHS Compliant
(Pin4)
D2 G1 S1
D2 S1 G1
SOT 563F
* Pin1 and Pin4 are exchangeable.
S2 G2 D1
2N7002V
G2 S2 D1
2N7002VA
Ordering Information
Part Number
2N7002V
2N7002VA
Top Mark
AB
AC
Package
SOT-563F 6L
SOT-563F 6L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VDSS
VDGR
VGSS
ID
TJ, TSTG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGS 1.0 MΩ)
Gate-Source Voltage
Drain Current
Junction and Storage Temperature Range
Continuous
Pulsed
Continuous
Pulsed
Value
60
60
±20
±40
280
1.5
-55 to +150
Unit
V
V
V
mA
A
°C
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
www.fairchildsemi.com


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Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Device Dissipation
Derate Above TA = 25°C
Thermal Resistance, Junction-to-Ambient(1)
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Value
250
2.0
500
Unit
mW
mW/°C
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics(2)
Conditions
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage
On Characteristics(2)
VGS = 0 V, ID = 10 μA
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V,
TJ = 125°C
VGS = ±20 V, VDS = 0 V
VGS(th)
RDS(ON)
ID(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
VGS = 5 V, ID = 0.05 A
Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A,
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 7.5 V
Forward Transconductance
VDS = 10 V, ID = 0.2 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS= 0 V,
f = 1.0 MHz
Switching Characteristics
tD(ON)
tD(OFF)
Turn-On Delay Time
Turn-Off Delay Time
VDD = 30 V, ID = 0.2 A,
VGEN = 10 V, RL = 150 Ω,
RGEN = 25 Ω
Note:
2. Short duration test pulse used to minimize self-heating effect.
Min. Typ. Max. Unit
60 78
0.001 1.0
7 500
V
μA
0.2 ±100 nA
1.00
1.50
80
1.76
1.6
2.53
1.43
356.5
2.50
7.5
2.0
13.5
V
Ω
A
mS
37.8
12.4
6.5
50
25
7
pF
pF
pF
5.85
12.5
20
20
ns
ns
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
2
www.fairchildsemi.com


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Typical Performance Characteristics
1.6
1.4
V = 10V
GS
1.2 5V
1.0
4V
0.8
0.6
0.4 3V
0.2
2V
0.0
0 1 2 3 4 5 6 7 8 9 10
V . DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics
3.0
V = 3V
GS
2.5
4V
4.5V
5V
6V
2.0
10V
1.5 9V
8V
7V
1.0
0.0
0.2 0.4 0.6 0.8
I . DRAIN-SOURCE CURRENT(A)
D
1.0
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
3.0
V = 10V
GS
2.5
I = 500 mA
D
2.0
1.5
1.0
3.0
2.5
2.0
I = 50 mA
D
1.5
I = 500 mA
D
0.5
-50
0 50 100
T . JUNCTION TEMPERATURE(oC)
J
150
Figure 3. On-Resistance Variation with Temperature
1.0
2468
V . GATE-SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation
with Gate-Source Voltage
10
1.0
V = 10V
DS
0.8
T = -25oC
J
25oC
0.6
0.4
0.2
150oC
125oC
75oC
2.5
V =V
GS DS
2.0
I = 1 mA
D
I = 0.25 mA
D
1.5
0.0
2345
V . GATE-SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics
1.0
6
-50 0
50 100 150
T . JUNCTION TEMPERATURE(oC)
J
Figure 6. Gate Threshold Variation with Temperature
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
3
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
V =0V
GS
100
150oC
25oC
10
-55oC
1
0.0 0.2 0.4 0.6 0.8 1.0
V , Body Diode Forward Voltage [V]
SD
Figure 7. Reverse Drain Current Variation with Diode
Forward Voltage and Temperature
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
T [oC], AMBIENT TEMPERATURE
a
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
4
www.fairchildsemi.com


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Physical Dimensions
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Figure 9. 6-LEAD, MO293, 1.2MM WIDE, SOT563F
© 2007 Fairchild Semiconductor Corporation
2N7002V / 2N7002VA Rev. 1.2
5
www.fairchildsemi.com


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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower¥
AttitudeEngine™
Awinda®
AX-CAP®*
BitSiC¥
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®
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and Better™
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OPTOPLANAR®
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PowerTrench®
PowerXS™
Programmable Active Droop¥
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QS¥
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Saving our world, 1mW/W/kW at a time™
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SMART START¥
Solutions for Your Success¥
SPM®
STEALTH¥
SuperFET®
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
®*
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TinyBuck®
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TinyPWM¥
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TriFault Detect¥
TRUECURRENT®*
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XS™
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௝❺
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Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I73
© Fairchild Semiconductor Corporation
www.fairchildsemi.com


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