Fairchild Semiconductor Electronic Components Datasheet


FDD5353

MOSFET



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April 2015
FDD5353
N-Channel Power Trench® MOSFET
60V, 50A, 12.3m
Features
General Description
Max rDS(on) = 12.3mat VGS = 10V, ID = 10.7A
Max rDS(on) = 15.4mat VGS = 4.5V, ID = 9.5A
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter
Synchronous rectifier
Primary switch
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
11.5
100
253
69
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD5353
Device
FDD5353
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250A, VGS = 0V
60
V
ID = 250A, referenced to 25°C
77 mV/°C
VGS = 0V, VDS = 48V,
VGS = ±20V, VDS = 0V
1
±100
A
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250A
ID = 250A, referenced to 25°C
VGS = 10V, ID = 10.7A
VGS = 4.5V, ID = 9.5A
VGS = 10V, ID = 10.7A, TJ = 125°C
VDD = 5V, ID = 10.7A
1.0
1.8 3.0
V
-8 mV/°C
10.1
12.1
16.7
41
12.3
15.4
20.3
m
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30V, VGS = 0V,
f = 1MHz
f = 1MHz
2420
215
120
1.7
3215
285
180
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 30V, ID = 10.7A,
VGS = 10V, RGEN = 6
VGS = 0V to 10V
VGS = 0V to 4.5V
VDD = 30V,
ID = 10.7A
11 20 ns
6 11 ns
36 58 ns
4 10 ns
46 65 nC
23 32 nC
7 nC
9 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 10.7A
VGS = 0V, IS = 2.6A
(Note 2)
(Note 2)
0.8 1.3
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 10.7A, di/dt = 100A/s
28 45 ns
21 34 nC
Notes:
1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RJCis guaranteed by design while RJA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%.
3: EAS of 253mJ is based on starting TJ = 25°C, L = 3mH, IAS = 13A, VDD = 60V, VGS = 10V. 100% test at L = 0.1mH, IAS = 41A.
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
100
VGS = 10V
80 VGS = 4.5V
VGS = 4V
60
VGS = 3.5V
40
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
20
VGS = 3V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
VGS = 3V
2.5
VGS = 3.5V
VGS = 4V
2.0
VGS = 4.5V
1.5
1.0
0.5
0
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
20 40 60
ID, DRAIN CURRENT(A)
VGS = 10V
80 100
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
1.8
ID = 10.7A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
40
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
32
ID = 10.7A
24
TJ = 125oC
16
8 TJ = 25oC
0
23456789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80s
DUTY CYCLE = 0.5%MAX
80
VDS = 5V
60
40
20
0
1
TJ = 150oC
TJ = 25oC
TJ = -55oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
5
200
100 VGS = 0V
10
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.4
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 10.7A
8
VDD = 20V
6
VDD = 30V
4
VDD = 40V
2
0
0 10 20 30 40 50
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
100
TJ = 25oC
10
TJ = 125oC
1
0.01
0.1 1
10
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
100
60
50
VGS = 10V
40
Limited by Package
30
20
RJC = 1.8oC/W
10
VGS = 4.5V
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
200
100
100µs
10
THIS AREA IS
LIMITED BY rDS(on)
1ms
1
0.1
1
SINGLE PULSE
TJ = MAX RATED
RJC = 1.8oC/W
TC = 25oC
10
10ms
DC
100
VDS, DRAIN to SOURCE VOLTAGE (V)
200
Figure 11. Forward Bias Safe
Operating Area
105
VGS = 10V
104
103
102
SINGLE PULSE
RJC = 1.8oC/W
TC = 25oC
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.001
5E-4
10-6
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RJC = 1.8oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJc x RJc + TC
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
10-4
10-3
PDM
SINGLE PULSE
RJA = 96oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 14. Transient Thermal Response Curve
100
1
1000
©2013 Fairchild Semiconductor Corporation
FDD5353 Rev.1.4
5
www.fairchildsemi.com


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