Fairchild Semiconductor Electronic Components Datasheet


FDD3860

MOSFET



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FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
„ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
„ High Performance Trench Technology for Extremely Low
rDS(on)
„ 100% UIL Tested
„ RoHS Compliant
September 2016
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
„ DC-AC Conversion
„ Synchronous Rectifier
G
S
D
DT O-P-2A5K2
(T O -25 2)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
29
6.2
60
121
83
3.75
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
16 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
V
ID = 250μA, referenced to 25°C
98 mV/°C
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250μA
ID = 250μA, referenced to 25°C
VGS = 10V, ID = 5.9A
VGS = 10V, ID = 5.9A, TJ = 125°C
VDS = 10V, ID = 5.9A
2.5
3.8
-11.4
29
51
20
4.5 V
mV/°C
36
mΩ
64
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50V, VGS = 0V,
f = 1MHz
f = 1MHz
1310
100
45
1.6
1740
130
70
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 5.9A,
VGS = 10V, RGEN = 6Ω
VDD = 50V, ID = 5.9A
16 29 ns
10 21 ns
24 39 ns
7 15 ns
22 31 nC
7.1 nC
6.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.0A
VGS = 0V, IS = 5.9A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 5.9A, di/dt = 100A/μs
0.7 1.2
0.8 1.3
V
34 55 ns
40 64 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V.
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted.
60
VGS = 10V
50
VGS = 8V
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 7V
30
20
10 VGS = 6V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
5
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
2.5
VGS = 6V
VGS = 7V
2.0
VGS = 8V
1.5
1.0 VGS = 10V
0.5
0
10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
60
2.2
2.0 ID = 5.9A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs. Junction Temperature
150
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
50
VDS = 10V
40
30
TJ = 150oC
20
TJ = 25oC
10
TJ = -55oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
100
ID = 5.9A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
80
60 TJ = 125oC
40
20 TJ = 25oC
0
56789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
10
100
VGS = 0V
10
1 TJ = 150oC
0.1
0.01
TJ = 25oC
TJ = -55oC
1E-3
0.0 0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
1.2
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted.
10
ID = 5.9A
8
6
VDD = 25V
VDD = 50V
VDD = 75V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
25
10
8
6
4
TJ = 125oC
TJ = 25oC
2
3000
1000
Ciss
Coss
100
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. Capacitance vs. Drain
to Source Voltage
35
28
VGS = 10V
21
14
RθJC = 1.8oC/W
7
100
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. Unclamped Inductive
Switching Capability
100
100
10
100us
1
THIS AREA IS
LIMITED BY rds(on)
0.1
0.1
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.8oC/W
TC = 25oC
10
1ms
10ms
DC
100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
150
105
VGS = 10V
104
103
SINGLE PULSE
RθJC = 1.8oC/W
102
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
Figure 12. Single Pulse Maximum Power Dissipation
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted.
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 1.8oC/W
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURREPNDTMAS FOLLOWS:
I = I25
1----5---0-1---2--t--51-T----C----
NOTES:
t2
TC
=
25oC
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.001
10-6
10-5
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
1
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 40oC/W
(Note 1a)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
100
Figure 14. Transient Thermal Response Curve
1000
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
10-4
10-3
PDM
SINGLE PULSE
RθJA = 96oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
10
Figure 15. Transient Thermal Response Curve
100
1000
©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
5
www.fairchildsemi.com


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Preliminary
First Production
No Identification Needed
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Full Production
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Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
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©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.1.3
6
Rev. I77
www.fairchildsemi.com


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