Fairchild Semiconductor Electronic Components Datasheet


FDD390N15A

MOSFET



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FDD390N15A
N-Channel PowerTrench® MOSFET
150 V, 26 A, 40 m
April 2015
Features
• RDS(on) = 33.5 m( Typ.)@ VGS = 10 V, ID = 26 A
• Fast Switching Speed
• Low Gate Charge, QG = 14.3 nC( Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Applications
• Consumer Appliances
• LED TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
D
G
S
D-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
(f > 1 Hz)
- Continuous (TC = 25oC,Silicon Limited)
- Continuous (TC = 100oC,Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDD390N15A
150
±20
±30
26
17
104
78
6.0
63
0.5
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD390N15A
2.0
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
1
www.fairchildsemi.com


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Package Marking and Ordering Information
Part Number
FDD390N15A
Top Mark
FDD390N15A
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 A, VGS = 0 V
ID = 250 A, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 125oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 26 A
VDS = 10 V, ID = 26 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 75 V, VGS = 0 V
f = 1 MHz
VDS = 75 V, VGS = 0 V
VDS = 75 V, ID = 27 A
VGS = 10 V
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
33.5
33
965
96
5.8
169
14.3
5.0
2.0
3.5
1.4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 27 A
VGS = 10 V, RGEN = 4.7
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 26 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 27 A, VDD = 75 V
dIF/dt = 100 A/s
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25C, L = 3 mH, ISD = 7.2 A
3. ISD 26 A, di/dt 200 A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
-
-
-
-
14
10
20
5
-
-
-
63
131
Quantity
2500 units
Max. Unit
-
-
1
500
±100
V
V/oC
A
nA
4.0 V
40 m
-S
1285
130
-
-
18.6
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
38 ns
30 ns
50 ns
20 ns
26 A
104 A
1.25 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
2
www.fairchildsemi.com


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Typical Performance Characteristics
Figure 1. On-Region Characteristics
200
VGS = 15.0V
100 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
0.1 1 5
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
80
60
VGS = 10V
40
VGS = 20V
*Note: TC = 25oC
20
0 20 40 60 80
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1000
Ciss
100
Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Crss
Coss = Cds + Cgd
Crss = Cgd
1
0.1 1
10 100 200
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
200
*Notes:
100 1. VDS = 10V
2. 250s Pulse Test
10
150oC
25oC
-55oC
1
2345678
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
100
150oC
10
25oC
*Notes:
1. VGS = 0V
2. 250s Pulse Test
1
0.4 0.6 0.8 1.0 1.2 1.3
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
VDS = 30V
VDS = 75V
VDS = 120V
6
4
2
*Note: ID = 27A
0
0 4 8 12 16
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
3
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.08
1.04
1.00
0.96
0.92
-80
*Notes:
1. VGS = 0V
2. ID = 250A
-40 0
40 80 120
TJ, Junction Temperature [oC]
160
Figure 9. Maximum Safe Operating Area
300
100
10s
10 100s
Operation in This Area
1 is Limited by R DS(on)
1ms
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
3ms
DC
10 100
VDS, Drain-Source Voltage [V]
200
Figure 11. Eoss vs. Drain to Source Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
30 60 90 120
VDS, Drain to Source Voltage [V]
150
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
Figure 8. On-Resistance Variation
vs. Temperature
2.6
2.4
2.0
1.6
1.2
0.8
0.4
-80
*Notes:
1. VGS = 10V
2. ID = 26A
-40 0 40 80 120
TJ, Junction Temperature [oC]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
30
VGS= 10V
25
20
15
10
5
RJC = 2.0oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
Figure 12. Unclamped Inductive
Switching Capability
12
If R = 0
10 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
o
STARTING TJ = 25 C
o
STARTING TJ = 150 C
1
0.01
0.1 1 10 20
tAV, TIME IN AVALANCHE (ms)
4 www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
3
1 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZJC(t) = 2.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
1
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
5
www.fairchildsemi.com


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IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 15. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
6
www.fairchildsemi.com


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DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --G--a--t-e--P---u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
7
www.fairchildsemi.com


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