Fairchild Semiconductor Electronic Components Datasheet


FDD306P

MOSFET



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March 2015
FDD306P
P-Channel 1.8V Specified PowerTrench® MOSFET
Features
–6.7 A, –12 V.
RDS(ON) = 28 m@ VGS = –4.5 V
RDS(ON) = 41 m@ VGS = –2.5 V
RDS(ON) = 90 m@ VGS = –1.8 V
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Applications
DC/DC converter
General Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
D
G
S
TO-252
S
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
(Note 1b)
Ratings
–12
±8
–6.7
–54
52
3.8
1.6
–55 to +175
2.9
40
96
Package Marking and Ordering Information
Device Marking
FDD306P
Device
FDD306P
Reel Size
13’’
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDD306P Rev. 2.2
1
www.fairchildsemi.com


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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –10 V, VGS = 0 V
VGS = ±8V, VDS = 0 V
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –6.7 A
VGS = –2.5 V, ID = –6.1 A
VGS = –1.8 V, ID = –4.8 A
VGS = –4.5 V, ID = –6.7A, TJ = 125°C
VGS = –4.5 V, VDS = –5 V
VDS = –5 V, ID = –6.7 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = –6 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDD = –6 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = –6V, ID = –6.7 A,
VGS = –4.5 V
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –3.2 A (Note 2)
Trr Diode Reverse Recovery Time
Irm Diode Reverse Recovery Current
IF = –6.7 A,
diF/dt = 100 A/µs
(Note 3)
Qrr Diode Reverse Recovery Charge
Min
–12
–0.4
–45
Typ
–0.6
–0.5
2.2
21
29
42
25
22
1290
590
430
4.2
16
8
34
41
15
2.0
4.4
–0.8
37
0.9
17
Max Units
V
mV/°C
–1
±100
µA
nA
–1.5 V
mV/°C
28 m
41
90
A
S
pF
pF
pF
29 ns
16 ns
54 ns
65 ns
21 nC
nC
nC
–3.2 A
–1.2 V
ns
A
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
RθJA
on a
= 40°C/W when
1in2 pad of 2 oz
mounted
copper
b) RθJA = 96°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
R-----D----PS----(D--O----N----) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V.
4. Starting TJ = 25°C, L = 3 mH, IAS = -4 A, VGS = -10 V, VDD = -12 V.
FDD306P Rev. 2.2
2
www.fairchildsemi.com


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Typical Characteristics
54
VGS = -4.5V
45
-4.0V
36
-3.5V
-3.0V
-2.5V
27
-2.0V
18
-1.8V
9
0
01234
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
ID = -6.7A
VGS = -4.5V
1.3
1.2
1.1
1
0.9
0.8
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
withTemperature.
54
VDS = - 5V
45
36
TA = -55°C
125°C
25°C
27
18
9
0
0123
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
2.5
VGS = -1.8V
-2.0V
2
-2.5V
1.5
-3.0V
-3.5V
-4.5V
1
0.5
0
9 18 27 36 45 54
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
0.08
ID = -3.4A
0.06
0.04
0.02
TA = 25°C
TA = 125°C
0
0 2 4 6 8 10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD306P Rev. 2.2
3 www.fairchildsemi.com


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Typical Characteristics
5
ID = -6.7A
4
3
2
VDS = -4V
-8V
-6V
1
0
0 4 8 12 16 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS =-4.5V
SINGLE PULSE
0.1 RθJA = 96oC/W
TA = 25 oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2400
2000
f = 1MHz
VGS = 0 V
1600
1200
800
Coss
400
Crss
Ciss
0
0369
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA (t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1/t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD306P Rev. 2.2
4 www.fairchildsemi.com


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