Vishay Intertechnology Electronic Components Datasheet

Si7682DP

N-Channel 30-V (D-S) MOSFET



Si7682DP Datasheet PDF
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N-Channel 30-V (D-S) MOSFET
Si7682DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0090 at VGS = 10 V
0.0130 at VGS = 4.5 V
ID (A)a
20
20
Qg (Typ.)
11 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7682DP-T1-E3 (Lead (Pb)-free)
Si7682DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
20
15.5
17.5b, c
14.0b, c
50
20
4.5b, c
27.5
17.5
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
3.5
25
°C/W
4.5
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
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Si7682DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = 5 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 9.5 A
Forward Transconductancea
gfs VDS = 15 V, ID = 20 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 11 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 11 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.87 Ω
ID 8 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.87 Ω
ID 8 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2.3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.4
30
0.2
Typ.
Max.
Unit
35
6.5
2.2
0.0075
0.0105
35
2.5
± 100
1
10
0.0090
0.0130
V
mV/°C
V
nA
µA
A
Ω
S
1595
375
150
24
11
4
3.1
0.55
18
82
18
10
11
55
23
8
38
17
0.9
30
130
30
16
18
85
35
15
pF
nC
Ω
ns
0.76
30
24
15.5
14.5
20
50
1.1
45
40
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73350
S09-0272-Rev. B, 16-Feb-09


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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 1.2
40
VGS = 10 thru 4 V
30
20
10
0
0.0
3V
0.3 0.6 0.9 1.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.016
2000
0.014
1600
Si7682DP
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
1.4 1.8 2.2 2.6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
Ciss
0.012
0.010
VGS = 4.5 V
0.008
VGS = 10 V
0.006
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 11 A
8
VDS = 10 V
6 VDS = 15 V
4 VDS = 20 V
2
0
0 5 10 15 20
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
25
1200
800
400 Crss
Coss
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6 ID = 12 A
1.4
VGS = 10 V
30
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
TJ = 150 °C
1
0.05
0.04
0.03
0.1
0.01
TJ = 25 °C
0.02
0.01
TJ = 25 °C
ID = 11 A
TJ = 125 °C
0.001
0.00 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.2
ID = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by
RDS(on)*
10
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
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1
0.1
TA = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
dc
0.01
0.1 1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09


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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
Si7682DP
Vishay Siliconix
40
30
20
10 Package Limited
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73350
S09-0272-Rev. B, 16-Feb-09
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Si7682DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73350.
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Document Number: 73350
S09-0272-Rev. B, 16-Feb-09


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Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1 Document Number: 91000





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