MXP6010CTS

 

60V N-Channel MOSFET

 

 

 

MaxPower

MaxPower



MXP6010CTS Datasheet PDF
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60V N-Channel MOSFET
MXP6010CTS Datasheet
Applications:
Power Supply
DC-DC Converters
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Change for Fast Switching Application
Optimized BVDSS Capability
Ordering Information
Part Number
Package
MXP6010CTS
TO220
Brand
MXP
VDSS
60 V
RDS(ON) (Max)
10.0 mΩ
IDa
107 A
Absolute Maximum Ratings
Tc=25unless otherwise specified
Symbol
Parameter
Value
Units
VDS Drain-to-Source Voltage
IDa
Continuous Drain Current
(TC=25)
60 V
107 A
EAS Single Pulse Avalanche Energy (L=1mH)
570 mJ
IAS Pulsed Avalanche Energy
Figure.9
A
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
a. Calculated continuous current based upon maximum allowable junction temperature, +175. Package limitation current is 80A.
OFF Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown
Voltage
IDSS
Drain-to-Source Leakage
Current
Gate-to-Source Forward
IGSS
Leakage
Gate-to-Source Reverse
Leakage
©MaxPower Semiconductor Inc.
Min Typ Max Units
Test Conditions
60 V VGS=0V, ID=250µA
1 VDS=48V, VGS=0V
µA
100 VDS=48V, VGS=0V TJ=125
100 VGS=+20V
nA
100 VGS= -20V
1 MXP6010CTS Rev 1.0, Jan 2011


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ON Characteristics
TJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
RDS(ON)
Static Drain-to-Source
On-Resistance
8.5 10 mΩ VGS= 10V, ID=24A
VGS(TH)
Gate Threshold Voltage 2
4 V VDS=VGS, ID=250µA
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Parameter
Min
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”)
Charge
td(on) Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Typ
2679
343
120
40
16
11
11
45
26
11
Max Units
Test Conditions
pF VGS=0V, VDS=25V, f=1.0MHz
nC VDD=30V, ID=38A, VG=10V
ns VDD=30V, ID=38A, VG=10V,
RG=2.5Ω
Source-Drain Diode Characteristics
Tc=25unless otherwise specified
Symbol
Parameter
Min Typ Max Units
Test Conditions
VSD Diode Forward Voltage
1.2 V IS=30A, VGS=0V
Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
2
All Rights Reserved.
MXP6010CTS Rev 1.0, Jan 2011


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Figure 1. Maximum Power Dissipation V.S
Case Temperature
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
TC, Case Temperature()
Figure 2. Maximum Continuous Drain
Current V.S Case Temperature
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
TC, Case Temperature()
Figure 3. Typical Output Characteristics
80
70
60
50
40
30
20
10
0
0
VGS=10, 9, 8, 7
V
VGS=6 V
VGS=5
V
0.5 1 1.5 2 2.5
VDS, Drain-to Source Voltage(A)
3
Figure 4. Breakdown Voltage V.S Junction
Temperature
1.18
1.13
1.08
1.03
0.98
0.93
0.88
-75
-25 25 75 125
TJ, Junction Temperature()
175
Figure 5. Threshold Voltage V.S Junction
Te mpe rature
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-75
-25 25 75 125
TJ, Junction Temperature()
175
©MaxPower Semiconductor Inc.
3
Figure 6. Drain-to-Source Resistance V.S
Junction Temperature
2.50
2.00
1.50
1.00
0.50
0.00
-75
-25 25 75 125
TJ, Junction Temperature()
175
MXP6010CTS Rev 1.0, Jan 2011


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Figure 7. Typical Gate Charge vs. Gate-to-
Source Voltage
10
9
8
7
6
5
4
3
2
1
0
0 10 20 30 40
QG, Gate Charge(nC)
50
Figure 9. Unclamped Inductive Switching
Capability
1000
Starting TJ=25oC
100
10
Figure 8. Typical Capacitance vs. Drain-to-
Source Voltage
5000
4000
3000
CISS
2000
1000
0
0
C COSS RSS
10 20 30 40 50
VDS, Drain Voltage(V)
60
Figure 10. Source-Drain Diode Forward
Voltage
1000
100
TJ=175oC
10
1
TJ=25oC
1
1.E-04
1.E-03
1.E-02
tAV, Time in Avalanche(s)
1.E-01
0
0.00
0.40 0.80 1.20 1.60
VSD, Source-to-Drain Voltage(V)
2.00
©MaxPower Semiconductor Inc. 4 MXP6010CTS Rev 1.0, Jan 2011


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Disclaims:
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improve reliability, function or design and to discontinue any product or service without notice.
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their behalf, disclaim any and all liability for any errors, inaccuracies or incompleteness contained
herein or in any other disclosure relating to any product.
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any product described herein or of any information provided herein to the maximum extent permitted
by law. The product specifications do not expand or otherwise modify MXP's terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
MaxPower Semiconductor Inc. warrants performance of its hardware products to the specifications at
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©MaxPower Semiconductor Inc. 5 MXP6010CTS Rev 1.0, Jan 2011





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