Fairchild Semiconductor Electronic Components Datasheet


FDB3502

MOSFET



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May 2008
FDB3502
N-Channel Power Trench® MOSFET
75V, 14A, 47m
tm
Features
General Description
„ Max rDS(on) = 47mat VGS = 10V, ID = 6A
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ Synchronous rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
75
±20
14
22
6
40
54
41
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
40
°C/W
Device Marking
FDB3502
Device
FDB3502
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
1
www.fairchildsemi.com


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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
75
V
ID = 250µA, referenced to 25°C
70 mV/°C
VGS = 0V, VDS = 60V,
VGS = ±20V, VDS = 0V
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
2.5 3.8 4.5
V
ID = 250µA, referenced to 25°C
-10 mV/°C
VGS = 10V, ID = 6A
VGS = 10V, ID = 6A, TJ = 125°C
VDD = 10V, ID = 6A
37 47
m
63 80
13 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 40V, VGS = 0V,
f = 1MHz
f = 1MHz
615 815
75 105
35 40
1.5
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 40V, ID = 6A,
VGS = 10V, RGEN = 6
VDD = 40V
ID = 6A
9 17 ns
3 10 ns
13 22 ns
3 10 ns
11 15 nC
4 nC
3 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 2.6A
VGS = 0V, IS = 6A
(Note 2)
(Note 2)
IF = 6A, di/dt = 100A/µs
0.78 1.2
0.83 1.3
25 41
17 32
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 75V, VGS = 10V.
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
2
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
40
VGS = 10V
35
VGS = 9V
30
25
VGS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
VGS = 7V
15
10
5 VGS = 6V
0
012345
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
VGS = 6V
VGS = 7V
2.5
VGS = 8V
2.0
VGS = 9V
1.5
1.0
0.5
0
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
5 10 15 20 25 30 35 40
ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.0
ID = 6A
1.8 VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
120
ID = 6A
90
TJ = 125oC
60
30 TJ = 25oC
0
56789
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
30
VDS = 7V
20
10
0
2
TJ = 150oC
TJ = 25oC
TJ = -55oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
40
10 VGS = 0V
TJ = 150oC
1
0.1
TJ = 25oC
0.01
TJ = -55oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
3
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 6A
8
6
VDD = 40V
VDD = 30V
VDD = 50V
4
2
0
0 2 4 6 8 10 12
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
1000
Ciss
100
Coss
f = 1MHz
VGS = 0V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure8. CapacitancevsDrain
to Source Voltage
10 25
TJ = 25oC
TJ = 125oC
20
15
Limited by Package
10
RθJC = 3oC/W
5
VGS = 10V
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
Figure9. Unclamped Inductive
Switching Capability
100
10
10
1
0.1
0.05
0.1
100us
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3oC/W
TC = 25oC
1ms
10ms
100ms
DC
1 10 100 300
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
104
VGS = 10V
103 SINGLE PULSE
RθJC = 3oC/W
TC = 25oC
102
10
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
4
www.fairchildsemi.com


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Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 3oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJc x RθJc + TC
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
10-1
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-4
SINGLE PULSE
RθJA = 62.5oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 14. Transient Thermal Response Curve
1
1000
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
5
www.fairchildsemi.com


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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
F-PFS™
FRFET®
Power-SPM™
PowerTrench®
tm
CorePOWER™
CROSSVOLT
CTL™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
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Current Transfer Logic™
EcoSPARK®
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
TINYOPTO™
TinyPower™
EfficentMax™
ISOPLANAR™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
®
tm
Fairchild®
Fairchild Semiconductor®
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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(a) are intended for surgical implant into the body or (b)
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properly used in accordance with instructions for use provided
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
©2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
www.fairchildsemi.com


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