Fairchild Semiconductor Electronic Components Datasheet


FDB082N15A

MOSFET



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April 2015
FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
Features
• RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 64.5 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC (f > 1 Hz)
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Sbove 25oC
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB082N15A
150
±20
±30
117
83
468
542
6
294
1.96
-55 to +175
300
FDB082N15A
0.51
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
1
www.fairchildsemi.com


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Package Marking and Ordering Information
Part Number
FDB082N15A
Top Mark
FDB082N15A
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TC = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 75 A
Dynamic Characteristics
Ciss
Coss
Crss
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 120 V, ID = 75 A,
VGS = 10 V
f = 1 MHz
(Note4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
-
-
6.7
139
4645
1445
100
4570
460
20
64.5
19.1
8.7
13.5
2.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 75 V, ID = 75 A,
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 75 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting TJ = 25°C, L = 3 mH, ISD = 19 A.
3. ISD 75 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
(Note4)
-
-
-
-
-
-
-
-
-
22
58
61
26
-
-
-
96
268
Quantity
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
8.20 mΩ
-S
6040
1880
-
6040
1880
-
84
-
-
-
-
pF
pF
pF
pF
pF
pF
nC
nC
nC
nC
Ω
54 ns
126 ns
132 ns
62 ns
117 A
468 A
1.25 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
2
www.fairchildsemi.com


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Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
10
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
14
12
10
VGS = 10V
8
6 VGS = 20V
4 *Note: TC = 25oC
0 100 200 300 400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
Coss
1000
Crss
100
*Note:
1. VGS = 0V
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
2. f = 1MHz Crss = Cgd
50
0.1 1
10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
300
100
175oC
25oC
10
-55oC
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
1
23456
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.0 0.5 1.0 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 30V
8 VDS = 75V
VDS = 120V
6
4
2
0 *Note: ID = 75A
0 14 28 42 56 70
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
3
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
100 10μs
10 100μs
Operation in This Area
1 is Limited by R DS(on)
1ms
10ms
SINGLE PULSE
DC
0.1
TC = 25oC
TJ = 175oC
RθJC = 0.51oC/W
0.01
0.1 1
10
100
VDS, Drain-Source Voltage [V]
300
Figure 11. Unclamped Inductive Switching
Capability
300
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 75A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
120
100
80
VGS = 10V
60
40
20
RθJC= 0.51oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
4
www.fairchildsemi.com


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Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05 PDM
0.02
0.01 0.01
Single pulse
*Notes:
t1
t2
1. ZθJC(t) = 0.51oC/W Max.
2. Duty Factor, D= t1/t2
1E-3
3. TJM - TC = PDM * ZθJC(t)
10-5 10-4 10-3 10-2 10-1 100
tR1,eRcetactnagnugulalarrPPuullssee Duurraattiioonn[s[sece]c]
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
5
www.fairchildsemi.com


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IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 14. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
6
www.fairchildsemi.com


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DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. 1.8
7
www.fairchildsemi.com


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10.67
9.65
4
-A-
1.68
1.00
4
10.67
9.65
8.38
(2.12)
2
13
5.08
1.78 MAX
1.78
1.14
0.99
0.51
0.25 MAX
PLASTIC BODY
STUB
1
0.25 M B A M
2
3
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
4 6.86 MIN 4
10.00
9.45
3.80
1.05
5.08
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
-B-
4.83
4.06
1.65
1.14
15.88
14.61
SEE
DETAIL A
2
2
31
31
0.25
0.25 MAX
SEATING
PLANE
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
2.79
1.78
(5.38)
0.10
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B F) FILENAME: TO263A02REV8
SCALE: 2X


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