Fairchild Semiconductor Electronic Components Datasheet


FDB110N15A

MOSFET



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April 2015
FDB110N15A
N-Channel PowerTrench® MOSFET
150 V, 92 A, 11 mΩ
Features
• RDS(on) = 9.25 mΩ (Typ.) @ VGS = 10 V, ID = 92 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(f > 1 Hz)
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDB110N15A
150
±20
±30
92
65
369
365
6
234
1.56
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB110N15A
0.64
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
1
www.fairchildsemi.com


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Package Marking and Ordering Information
Part Number
FDB110N15A
Top Mark
FDB110N15A
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 120 V, VGS = 0 V
VDS = 120 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 92 A
VDS = 10 V, ID = 92 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Releted Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 75 V, VGS = 0 V,
f = 1 MHz
VDS = 75 V, ID = 92 A
VGS = 10 V, VDS = 75 V,
ID = 92 A
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
ESR
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
VDD = 75 V, ID = 92 A,
VGS = 10 V, RG = 4.7 Ω
f = 1 MHz
(Note 4)
Min.
150
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.09
-
-
-
-
9.25
118
3390
334
14
583
47
16
7.9
9.7
25
26
46
14
2.5
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 92 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 92 A, VDD = 75 V,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width-limited by maximum junction temperature.
2. L = 3 mH, IAS = 15.6 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 92 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
89
255
Quantity
800 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
11.0 mΩ
-S
4510
445
-
-
61
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
60 ns
62 ns
102 ns
38 ns
-Ω
92 A
369 A
1.25 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
2
www.fairchildsemi.com


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Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
100 5.5V
5.0V
10
5
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
24
20
16
VGS = 10V
12 VGS = 20V
8 *Note: TC = 25oC
0 50 100 150 200 250 300 350
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
Coss
*Note:
100 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
0.1
1
10
VDS, Drain-Source Voltage [V]
Crss
100 200
Figure 2. Transfer Characteristics
500
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
100
175oC
25oC
-55oC
10
1
234567
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
175oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
VDS = 30V
VDS = 75V
VDS = 120V
6
4
2
0 *Note: ID = 92A
0 10 20 30 40 50
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
3
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
1000
10μs
100
100μs
10
Operation in This Area
1 is Limited by R DS(on)
1ms
10ms
0.1
0.01
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
DC
1 10 100
VDS, Drain-Source Voltage [V]
300
Figure 11. Eoss vs. Drain to Source Voltage
4
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 92A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
VGS = 10V
80
60
40
20
RθJC = 0.64oC/W
0
25 50 75 100 125 150
TC, Case Temperature [oC]
175
3
2
1
0
0 25 50 75 100 125 150
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
4
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05 PDM
0.01
0.02
0.01
Single pulse
*Notes:
t1
t2
1. ZθJC(t) = 0.64oC/W Max.
2. Duty Factor, D= t1/t2
0.001
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
1
tR1,eRcetcatnagnugulalar rPPuulslsee DDuratiioonn[[sseecc] ]
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
5
www.fairchildsemi.com


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IG = const.
Figure 13. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 14. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
6
www.fairchildsemi.com


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DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
I SD
( DUT )
VDS
( DUT )
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDB110N15A Rev. 1.4
7
www.fairchildsemi.com


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10.67
9.65
4
-A-
1.68
1.00
4
10.67
9.65
8.38
(2.12)
2
13
5.08
1.78 MAX
1.78
1.14
0.99
0.51
0.25 MAX
PLASTIC BODY
STUB
1
0.25 M B A M
2
3
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
4 6.86 MIN 4
10.00
9.45
3.80
1.05
5.08
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
-B-
4.83
4.06
1.65
1.14
15.88
14.61
SEE
DETAIL A
2
2
31
31
0.25
0.25 MAX
SEATING
PLANE
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
2.79
1.78
(5.38)
0.10
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B F) FILENAME: TO263A02REV8
SCALE: 2X


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