Fairchild Semiconductor Electronic Components Datasheet


FDS8934

Dual P-Channel Enhancement Mode Field Effect Transistor



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May 1998
FDS8934A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,
RDS(ON) = 0.072 @ VGS = -2.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D2
D2
D1
D1
F8D9S34A
SO-8
G2
S2
pin 1
G1
S1
SO-8
SOT-223
5
6
7
8
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS8934A
-20
-8
-4
-20
2
1.6
1
0.9
-55 to 150
78
40
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS8934A Rev.B


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Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
IDSS Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS = 0 V, I D = -250 µA
ID = -250 µA, Referenced to 25 oC
VDS = -16 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS= 0 V
-20
-23
V
mV/oC
-1 µA
-100 nA
-100 nA
VGS(th)
VGS(th)/TJ
RDS(ON)
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
ID(ON) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = VGS, ID = -250 µA
ID = -250 µA, Referenced to 25 oC
VGS = -4.5 V, I D = -4 A
TJ =125°C
VGS = -2.5 V, I D = -3.4 A
VGS = -10 V, VDS = -5 V
VDS = -10 V, I D = -4 A
-0.4 -0.6
4
-1 V
mV/oC
0.043 0.055
0.062 0.077
0.059 0.072
-20 A
13 S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
1130
480
120
pF
pF
pF
tD(on) Turn - On Delay Time
VDS = -10 V, I D = -1 A
tr Turn - On Rise Time
VGS = -4.5 V , RGEN = 6
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
VDS = -5 V, I D = -4 A,
Qgs Gate-Source Charge
VGS = -5 V
Qgd Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
8 16
23 37
260 360
90 125
20 28
2.8
3.2
ns
nC
IS Maximum Continuous Drain-Source Diode Forward Current
-1.3 A
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, I S -1.3 A (Note 2)
-0.7 -1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS8934A Rev.B


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Typical Electrical Characteristics
20
VGS = -4.5V
-3.0V
15 -2.5V
-2.0V
10
-1.5V
5
0
01234
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
5
1.6
ID = -4.0A
1.4 V GS = -4.5V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation with
Temperature.
10
VDS = -5V
8
6
TJ = -55°C
25°C
125°C
4
2
0
0.4 0.8 1.2 1.6
-VGS , GATE TO SOURCE VOLTAGE (V)
2
Figure 5. Transfer Characteristics.
3
2.5
V GS= -1.5V
2
1.5
1
-2.0V
-2.5V
-3.0V
-4.5V
0.5
0
4 8 12 16
- I D , DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
0.2
I D = -2A
0.15
0.1
0.05
0
0
TA = 125°C
25°C
1234
-VGS , GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS= 0V
3
1
TJ =125°C 25°C
0.1 -55°C
0.01
0.001
0
0.2 0.4 0.6 0.8
1
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS8934A Rev.B


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Typical Electrical Characteristics (continued)
5
ID =-4.0A
4
3
2
1
0
04
VDS= -5V
-15V
-10V
8 12
Q g , GATE CHARGE (nC)
16
20
Figure 7. Gate Charge Characteristics.
3000
2000
1000
500
Ciss
Coss
200
100 f = 1 MHz
VGS = 0 V
50
0.1 0.2
0.5
1
2
5
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Crss
10
20
Figure 8. Capacitance Characteristics.
50
20
10
5
1
0.3
0.1
0.03
0.01
0.1
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 135°C/W
TAA = 25°C
1m10s0us
10ms
100ms
1s
10s
DC
0.2
0.5 1
2
5 10 20 30
- VDS , DRAIN-SOURCE VOLTAGE (V)
50
Figure 9. Maximum Safe Operating Area.
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =135°C/W
TA = 25°C
0.01 0.1 1 10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.01
0.1
t1 , TIME (sec)
1
R θJA (t) = r(t) * R θJA
R θJA = 135°C/W
P(pk)
t1 t 2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 /t2
10 100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8934A Rev.B


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SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
ESD Label
Antistatic Cover Tape
Static Dissipative
Embossed Carrier Tape
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Customized
Label
F63TNR
Label
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Standard
(no flow code)
TNR
L86Z
Rail/Tube
F011
TNR
Qty per Reel/Tube/Bag
2,500
95
4,000
Reel Size
13" Dia - 13" Dia
Box Dimension (mm) 343x64x343 530x130x83 343x64x343
Max qty per Box
5,000
30,000
8,000
Weight per unit (gm)
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
Note/Comments
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2500
SPEC:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
SOIC-8 Unit Orientation
F852
NDS
9959
Pin 1
343mm x 342mm x 64mm
Standard Intermediate box
F63TNLabel
ESD Label
F63TN Label
ESD Label
Carrier Tape
Cover Tape
Trailer Tape
640mm minimum or
80 empty pockets
Components
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B


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SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
K0
Wc
B0
Tc
A0 P1 D1
User Direction of Feed
E1
F
E2
W
Dimensions are in millimeter
Pkg type
A0
SOIC(8lds) 6.50
(12mm)
+/-0.10
B0
5.30
+/-0.10
W
12.0
+/-0.3
D0 D1 E1 E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
F P1
5.50
+/-0.05
8.0
+/-0.1
P0
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
Typical
component
A0 center line
Sketch B (Top View)
Component Rotation
K0
2.1
+/-0.10
T
0.450
+/-
0.150
Wc
9.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
12mm
7" Dia
12mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
7.00
178
Dim W1
0.488 +0.078/-0.000
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
DETAIL AA
Dim W2
0.724
18.4
0.724
18.4
Dim W3 (LSL-USL)
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
© 1998 Fairchild Semiconductor Corporation
July 1999, Rev. B


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SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A


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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
Product Status
Formative or
In Design
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.





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